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Article: Carrier mobility distribution in annealed undoped LEC InP material

TitleCarrier mobility distribution in annealed undoped LEC InP material
Authors
Issue Date2000
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2000, v. 211 n. 1, p. 179-183 How to Cite?
AbstractN-type liquid encapsulated Czochralski (LEC) undoped InP wafers are annealed between 700 and 900°C for different durations. From a large quantity of Hall measurement results, it is found that there is a Hall mobility distribution dependent on the carrier concentration of the annealed material. The lowest mobility is observed in the samples with concentration around approx. 10 10 cm -3. In these samples carrier mobility increases with increasing temperature which is caused by nonuniformity. Combined with results of defect investigation in the annealed material, formation of defects and their nonuniform distribution are found to correlate with this mobility distribution. The formation of defect complexes is interpreted as a reason for the high mobility observed in annealed InP.
Persistent Identifierhttp://hdl.handle.net/10722/80527
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorZhang, Jen_HK
dc.contributor.authorBi, Ken_HK
dc.contributor.authorWu, Xen_HK
dc.date.accessioned2010-09-06T08:07:26Z-
dc.date.available2010-09-06T08:07:26Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal Of Crystal Growth, 2000, v. 211 n. 1, p. 179-183en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80527-
dc.description.abstractN-type liquid encapsulated Czochralski (LEC) undoped InP wafers are annealed between 700 and 900°C for different durations. From a large quantity of Hall measurement results, it is found that there is a Hall mobility distribution dependent on the carrier concentration of the annealed material. The lowest mobility is observed in the samples with concentration around approx. 10 10 cm -3. In these samples carrier mobility increases with increasing temperature which is caused by nonuniformity. Combined with results of defect investigation in the annealed material, formation of defects and their nonuniform distribution are found to correlate with this mobility distribution. The formation of defect complexes is interpreted as a reason for the high mobility observed in annealed InP.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.rightsJournal of Crystal Growth. Copyright © Elsevier BV.en_HK
dc.titleCarrier mobility distribution in annealed undoped LEC InP materialen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=211&spage=179&epage=183&date=2000&atitle=Carrier+Mobility+Distribution+in+Annealed+Undoped+LEC+InP+Materialen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0022-0248(99)00859-3en_HK
dc.identifier.scopuseid_2-s2.0-0033872275en_HK
dc.identifier.hkuros48466en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033872275&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume211en_HK
dc.identifier.issue1en_HK
dc.identifier.spage179en_HK
dc.identifier.epage183en_HK
dc.identifier.isiWOS:000086199600031-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridZhao, YW=7406633326en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridZhang, J=7601347616en_HK
dc.identifier.scopusauthoridBi, K=7004436355en_HK
dc.identifier.scopusauthoridWu, X=7407065357en_HK

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