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Article: Influence of Fe doping concentration on some properties of semi-insulating InP

TitleInfluence of Fe doping concentration on some properties of semi-insulating InP
Authors
KeywordsDefects
InP
Semi-insulation
Issue Date2002
PublisherLondon Corn Circular.
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 10, p. 1041-1045 How to Cite?
AbstractProperties of Fe-doped semi-insulating (SI) InP with different iron concentration are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.
Persistent Identifierhttp://hdl.handle.net/10722/80516
ISSN
2011 SCImago Journal Rankings: 0.140
References

 

DC FieldValueLanguage
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorLuo, Yen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLin, Len_HK
dc.date.accessioned2010-09-06T08:07:19Z-
dc.date.available2010-09-06T08:07:19Z-
dc.date.issued2002en_HK
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 10, p. 1041-1045en_HK
dc.identifier.issn0253-4177en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80516-
dc.description.abstractProperties of Fe-doped semi-insulating (SI) InP with different iron concentration are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.en_HK
dc.languageengen_HK
dc.publisherLondon Corn Circular.en_HK
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_HK
dc.subjectDefectsen_HK
dc.subjectInPen_HK
dc.subjectSemi-insulationen_HK
dc.titleInfluence of Fe doping concentration on some properties of semi-insulating InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0899-9988&volume=23&spage=1041&epage=1044&date=2002&atitle=Influence+of+Fe+doping+concentration+on+some+properties+of+semi-insulating+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0036814111en_HK
dc.identifier.hkuros75690en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036814111&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue10en_HK
dc.identifier.spage1041en_HK
dc.identifier.epage1045en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridZhao, Y=7406633326en_HK
dc.identifier.scopusauthoridLuo, Y=7404333050en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLin, L=7404131111en_HK

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