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Article: Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

TitleExperimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces
Authors
Issue Date2002
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcm
Citation
Journal Of Physics Condensed Matter, 2002, v. 14 n. 25, p. 6373-6381 How to Cite?
AbstractSlow-positron emission from the surfaces of as-grown n-type 4H-SiC and 6H-SiC (silicon carbide) with a conversion efficiency of ∼10-4 has been observed. After 30 min of 1000°C annealing in forming gas, the conversion efficiency of the n-type 6H-SiC sample was observed to be enhanced by 75% to 1.9 × 10-4, but it then dropped to ∼10-5 upon a further 30 min annealing at 1400°C. The positron work function of the n-type 6H-SiC was found to increase by 29% upon 1000°C annealing. For both p-type 4H-SiC and p-type 6H-SiC materials, the conversion efficiency was of the order of ∼10-5, some ten times lower than that for the n-type materials. This was attributed to the band bending at the p-type material surface which caused positrons to drift away from the positron emitting surface.
Persistent Identifierhttp://hdl.handle.net/10722/80515
ISSN
2015 Impact Factor: 2.209
2015 SCImago Journal Rankings: 0.812
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:07:18Z-
dc.date.available2010-09-06T08:07:18Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal Of Physics Condensed Matter, 2002, v. 14 n. 25, p. 6373-6381en_HK
dc.identifier.issn0953-8984en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80515-
dc.description.abstractSlow-positron emission from the surfaces of as-grown n-type 4H-SiC and 6H-SiC (silicon carbide) with a conversion efficiency of ∼10-4 has been observed. After 30 min of 1000°C annealing in forming gas, the conversion efficiency of the n-type 6H-SiC sample was observed to be enhanced by 75% to 1.9 × 10-4, but it then dropped to ∼10-5 upon a further 30 min annealing at 1400°C. The positron work function of the n-type 6H-SiC was found to increase by 29% upon 1000°C annealing. For both p-type 4H-SiC and p-type 6H-SiC materials, the conversion efficiency was of the order of ∼10-5, some ten times lower than that for the n-type materials. This was attributed to the band bending at the p-type material surface which caused positrons to drift away from the positron emitting surface.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpcmen_HK
dc.relation.ispartofJournal of Physics Condensed Matteren_HK
dc.titleExperimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfacesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0953-8984&volume=14&spage=6373&epage=6381&date=2002&atitle=Experimental+investigation+of+slow-positron+emission+from+4H-SiC+and+6H-SiC+surfacesen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0953-8984/14/25/306en_HK
dc.identifier.scopuseid_2-s2.0-0036639841en_HK
dc.identifier.hkuros66513en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036639841&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume14en_HK
dc.identifier.issue25en_HK
dc.identifier.spage6373en_HK
dc.identifier.epage6381en_HK
dc.identifier.isiWOS:000177025700013-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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