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Article: Rapid thermal annealing induced deep level defects in Te-doped GaAs

TitleRapid thermal annealing induced deep level defects in Te-doped GaAs
Authors
Reddy, CVFung, SBeling, CD
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (A) Applied Research, 1998, v. 168 n. 2, p. 463-474 How to Cite?
AbstractRapid thermal annealing (RTA) induced defect transformations in tellurium-doped GaAs (GaAs:Te) have been investigated using deep level transient spectroscopy (DLTS) studies. The unusual aspect of Te-doping in GaAs on the passivation of native defects such as EL6, EL3 and EL2 levels is discussed with reference to the undoped and Si-doped GaAs. The origin of a defect with Poole-Frenkel emission behaviour, whose activation energy displays a strong electric field dependence, in one of the rapid thermal annealed samples is also discussed. Its zero electric field activation energy is speculated as (0.58 ± 0.02) eV.
Persistent Identifierhttp://hdl.handle.net/10722/80510
ISSN
0031-8965
ISI Accession Number ID
WOS:000075748000019
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorReddy, CVen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:07:14Z-
dc.date.available2010-09-06T08:07:14Z-
dc.date.issued1998en_HK
dc.identifier.citationPhysica Status Solidi (A) Applied Research, 1998, v. 168 n. 2, p. 463-474en_HK
dc.identifier.issn0031-8965en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80510-
dc.description.abstractRapid thermal annealing (RTA) induced defect transformations in tellurium-doped GaAs (GaAs:Te) have been investigated using deep level transient spectroscopy (DLTS) studies. The unusual aspect of Te-doping in GaAs on the passivation of native defects such as EL6, EL3 and EL2 levels is discussed with reference to the undoped and Si-doped GaAs. The origin of a defect with Poole-Frenkel emission behaviour, whose activation energy displays a strong electric field dependence, in one of the rapid thermal annealed samples is also discussed. Its zero electric field activation energy is speculated as (0.58 ± 0.02) eV.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.physica-status-solidi.comen_HK
dc.relation.ispartofPhysica Status Solidi (A) Applied Researchen_HK
dc.titleRapid thermal annealing induced deep level defects in Te-doped GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1474-7065&volume=168&spage=463&epage=474&date=1998&atitle=Rapid+Thermal+Annealing+Induced+Deep+Level+Defects+in+Te-Doped+GaAsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0032141906en_HK
dc.identifier.hkuros35419en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032141906&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume168en_HK
dc.identifier.issue2en_HK
dc.identifier.spage463en_HK
dc.identifier.epage474en_HK
dc.identifier.isiWOS:000075748000019-
dc.identifier.scopusauthoridReddy, CV=8621657000en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0031-8965-

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