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Article: Photon-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals
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TitlePhoton-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals
 
AuthorsDing, L2
Chen, TP2
Yang, M2
Wong, JI2
Liu, Y2
Yu, SF2
Zhu, FR4
Tan, MC4
Fung, S1
Tung, CH3
Trigg, AD3
 
KeywordsGermanium compounds
Light modulation
Nanocrystals
Optical data storage
Silicon compounds
 
Issue Date2007
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2007, v. 90 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2711198
 
AbstractThe authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.2711198
 
ISI Accession Number IDWOS:000244791700080
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorDing, L
 
dc.contributor.authorChen, TP
 
dc.contributor.authorYang, M
 
dc.contributor.authorWong, JI
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorYu, SF
 
dc.contributor.authorZhu, FR
 
dc.contributor.authorTan, MC
 
dc.contributor.authorFung, S
 
dc.contributor.authorTung, CH
 
dc.contributor.authorTrigg, AD
 
dc.date.accessioned2010-09-06T08:07:13Z
 
dc.date.available2010-09-06T08:07:13Z
 
dc.date.issued2007
 
dc.description.abstractThe authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2711198
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2711198
 
dc.identifier.hkuros126868
 
dc.identifier.isiWOS:000244791700080
 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue10
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-33947128782
 
dc.identifier.urihttp://hdl.handle.net/10722/80507
 
dc.identifier.volume90
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsCopyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2007, v. 90 n. 10, article no. 103102) and may be found at (http://apl.aip.org/resource/1/applab/v90/i10/p103102_s1).
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectGermanium compounds
 
dc.subjectLight modulation
 
dc.subjectNanocrystals
 
dc.subjectOptical data storage
 
dc.subjectSilicon compounds
 
dc.titlePhoton-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals
 
dc.typeArticle
 
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<contributor.author>Chen, TP</contributor.author>
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<contributor.author>Wong, JI</contributor.author>
<contributor.author>Liu, Y</contributor.author>
<contributor.author>Yu, SF</contributor.author>
<contributor.author>Zhu, FR</contributor.author>
<contributor.author>Tan, MC</contributor.author>
<contributor.author>Fung, S</contributor.author>
<contributor.author>Tung, CH</contributor.author>
<contributor.author>Trigg, AD</contributor.author>
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<subject>Germanium compounds</subject>
<subject>Light modulation</subject>
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<subject>Optical data storage</subject>
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Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. null
  4. Institute of Materials Research and Engineering, A-Star, Singapore