Article: Photon-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals

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TitlePhoton-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals
AuthorsDing, L2
Chen, TP2
Yang, M2
Wong, JI2
Liu, Y2
Yu, SF2
Zhu, FR4
Tan, MC4
Fung, S1
Tung, CH3
Trigg, AD3
KeywordsGermanium compounds
Light modulation
Nanocrystals
Optical data storage
Silicon compounds
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
CitationApplied Physics Letters, 2007, v. 90 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2711198
AbstractThe authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.
ISSN0003-6951
2011 Impact Factor: 3.844
2011 SCImago Journal Rankings: 0.398
DOIhttp://dx.doi.org/10.1063/1.2711198
ISI Accession Number IDWOS:000244791700080
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorDing, L
dc.contributor.authorChen, TP
dc.contributor.authorYang, M
dc.contributor.authorWong, JI
dc.contributor.authorLiu, Y
dc.contributor.authorYu, SF
dc.contributor.authorZhu, FR
dc.contributor.authorTan, MC
dc.contributor.authorFung, S
dc.contributor.authorTung, CH
dc.contributor.authorTrigg, AD
dc.date.accessioned2010-09-06T08:07:13Z
dc.date.available2010-09-06T08:07:13Z
dc.date.issued2007
dc.description.abstractThe authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.
dc.description.naturepublished_or_final_version
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2711198
dc.identifier.doihttp://dx.doi.org/10.1063/1.2711198
dc.identifier.hkuros126868
dc.identifier.isiWOS:000244791700080
dc.identifier.issn0003-6951
2011 Impact Factor: 3.844
2011 SCImago Journal Rankings: 0.398
dc.identifier.issue10
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-33947128782
dc.identifier.urihttp://hdl.handle.net/10722/80507
dc.identifier.volume90
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
dc.publisher.placeUnited States
dc.relation.ispartofApplied Physics Letters
dc.relation.referencesReferences in Scopus
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
dc.rightsCopyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2007, v. 90 n. 10, article no. 103102) and may be found at (http://apl.aip.org/resource/1/applab/v90/i10/p103102_s1).
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectGermanium compounds
dc.subjectLight modulation
dc.subjectNanocrystals
dc.subjectOptical data storage
dc.subjectSilicon compounds
dc.titlePhoton-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. null
  4. Institute of Materials Research and Engineering, A-Star, Singapore