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Conference Paper: Positron- electron autocorrelation function study of e-center in phosphorus-doped silicon

TitlePositron- electron autocorrelation function study of e-center in phosphorus-doped silicon
Authors
Keywords2D ACAR
Fourier Transformation
Positron-Electron Autocorrelation-Function
Silicon E-Center
Silicon Localized Defect Orbitals
Issue Date2004
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 2004, v. 445-446, p. 111-113 How to Cite?
AbstractTwo dimensional Fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 Phosphorus-doped Si in the as grown state and after being subjected to 1.8MeV e - fluences of 2×10 18cm -2. In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the Bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals.
Persistent Identifierhttp://hdl.handle.net/10722/80477
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorHo, KFen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBiasini, Men_HK
dc.contributor.authorFerra, Gen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2010-09-06T08:06:53Z-
dc.date.available2010-09-06T08:06:53Z-
dc.date.issued2004en_HK
dc.identifier.citationMaterials Science Forum, 2004, v. 445-446, p. 111-113en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80477-
dc.description.abstractTwo dimensional Fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 Phosphorus-doped Si in the as grown state and after being subjected to 1.8MeV e - fluences of 2×10 18cm -2. In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the Bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subject2D ACARen_HK
dc.subjectFourier Transformationen_HK
dc.subjectPositron-Electron Autocorrelation-Functionen_HK
dc.subjectSilicon E-Centeren_HK
dc.subjectSilicon Localized Defect Orbitalsen_HK
dc.titlePositron- electron autocorrelation function study of e-center in phosphorus-doped siliconen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=445-446&spage=111&epage=113&date=2004&atitle=Positron-electron+autocorrelation+function+study+of+E-center+in+Phosphorus-doped+Siliconen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-3142675204en_HK
dc.identifier.hkuros85724en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3142675204&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume445-446en_HK
dc.identifier.spage111en_HK
dc.identifier.epage113en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridHo, KF=7403581787en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBiasini, M=34767905500en_HK
dc.identifier.scopusauthoridFerra, G=35333872000en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK

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