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Article: CdTe nanorod arrays on ITO: From microstructure to photoelectrical property

TitleCdTe nanorod arrays on ITO: From microstructure to photoelectrical property
Authors
KeywordsAligned arrays
Catalyst-free thermal evaporation
CdTe
Deep level emission
Large absorption coefficient
Issue Date2009
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/
Citation
Journal Of Physical Chemistry C, 2009, v. 113 n. 39, p. 16951-16953 How to Cite?
AbstractCdTe nanorod arrays on ITO have been demonstrated using a catalyst-free thermal evaporation method. Despite the stacking faults observed in the nanorods, they show intense near band edge emission at ̃1.5 eV with a narrow full width at half-maximum of 79 meV and negligible deep-level emission during the room temperature photoluminescence measurement. The device based on the aligned array-on-ITO configuration demonstrates excellent photoresponse to the visible light, which is ascribed to the large absorption coefficient of the material and also suggests good electronic structure quality of the nanorods. © 2009 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/80468
ISSN
2015 Impact Factor: 4.509
2015 SCImago Journal Rankings: 1.995
ISI Accession Number ID
Funding AgencyGrant Number
GRF of HKSAR414908
CUHK Focused Investment Scheme C
CUHK Group Research Scheme
National Nature Science Foundation of China50772032
MOE of China20060512004
NSF Creative Team Project of Hubei Province2007ABC005
Funding Information:

This work is supported by grants from the GRF of HKSAR under Project No. 414908, CUHK Focused Investment Scheme C, CUHK Group Research Scheme, the National Nature Science Foundation of China (No. 50772032), Research Fund for the Doctoral Program of MOE of China (No. 20060512004), and NSF Creative Team Project of Hubei Province (No. 2007ABC005).

References

 

DC FieldValueLanguage
dc.contributor.authorWang, Xen_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorZhou, Men_HK
dc.contributor.authorZhu, Hen_HK
dc.contributor.authorWang, Hen_HK
dc.contributor.authorCui, Xen_HK
dc.contributor.authorXiao, Xen_HK
dc.contributor.authorLi, Qen_HK
dc.date.accessioned2010-09-06T08:06:47Z-
dc.date.available2010-09-06T08:06:47Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Physical Chemistry C, 2009, v. 113 n. 39, p. 16951-16953en_HK
dc.identifier.issn1932-7447en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80468-
dc.description.abstractCdTe nanorod arrays on ITO have been demonstrated using a catalyst-free thermal evaporation method. Despite the stacking faults observed in the nanorods, they show intense near band edge emission at ̃1.5 eV with a narrow full width at half-maximum of 79 meV and negligible deep-level emission during the room temperature photoluminescence measurement. The device based on the aligned array-on-ITO configuration demonstrates excellent photoresponse to the visible light, which is ascribed to the large absorption coefficient of the material and also suggests good electronic structure quality of the nanorods. © 2009 American Chemical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/en_HK
dc.relation.ispartofJournal of Physical Chemistry Cen_HK
dc.subjectAligned arrays-
dc.subjectCatalyst-free thermal evaporation-
dc.subjectCdTe-
dc.subjectDeep level emission-
dc.subjectLarge absorption coefficient-
dc.titleCdTe nanorod arrays on ITO: From microstructure to photoelectrical propertyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1932-7447&volume=113&issue=39&spage=16951&epage=16953&date=2009&atitle=CdTe+nanorod+arrays+on+ITO:+from+microstructure+to+photoelectrical+propertyen_HK
dc.identifier.emailCui, X: xdcui@hku.hken_HK
dc.identifier.authorityCui, X=rp00689en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp905577uen_HK
dc.identifier.scopuseid_2-s2.0-70350434104en_HK
dc.identifier.hkuros169477en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70350434104&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume113en_HK
dc.identifier.issue39en_HK
dc.identifier.spage16951en_HK
dc.identifier.epage16953en_HK
dc.identifier.isiWOS:000269999700019-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, X=23037359600en_HK
dc.identifier.scopusauthoridWang, J=15038656100en_HK
dc.identifier.scopusauthoridZhou, M=24781325800en_HK
dc.identifier.scopusauthoridZhu, H=26649235300en_HK
dc.identifier.scopusauthoridWang, H=9745514100en_HK
dc.identifier.scopusauthoridCui, X=10839907500en_HK
dc.identifier.scopusauthoridXiao, X=7402170323en_HK
dc.identifier.scopusauthoridLi, Q=26643395500en_HK

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