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Article: Positron Lifetime in Elemental Semiconductors in the Generalized Gradient Approximation

TitlePositron Lifetime in Elemental Semiconductors in the Generalized Gradient Approximation
Authors
Issue Date1997
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (B) Basic Research, 1997, v. 204 n. 2, p. 679-683 How to Cite?
AbstractPositron lifetimes in bulk elemental semiconductors diamond, Si and Ge are calculated in this work. The electron density is determined from the empirical pseudopotential method. The positron density is calculated in the point-core approximation. The electron-positron con elation potential and the enhancement factor are treated in the generalised gradient approximation. The calculated positron lifetimes are in good agreement with experiments.
Persistent Identifierhttp://hdl.handle.net/10722/80424
ISSN
2015 Impact Factor: 1.522
2015 SCImago Journal Rankings: 0.679
References

 

DC FieldValueLanguage
dc.contributor.authorLiming, Wen_HK
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:06:18Z-
dc.date.available2010-09-06T08:06:18Z-
dc.date.issued1997en_HK
dc.identifier.citationPhysica Status Solidi (B) Basic Research, 1997, v. 204 n. 2, p. 679-683en_HK
dc.identifier.issn0370-1972en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80424-
dc.description.abstractPositron lifetimes in bulk elemental semiconductors diamond, Si and Ge are calculated in this work. The electron density is determined from the empirical pseudopotential method. The positron density is calculated in the point-core approximation. The electron-positron con elation potential and the enhancement factor are treated in the generalised gradient approximation. The calculated positron lifetimes are in good agreement with experiments.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_HK
dc.relation.ispartofPhysica Status Solidi (B) Basic Researchen_HK
dc.titlePositron Lifetime in Elemental Semiconductors in the Generalized Gradient Approximationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1474-7065&volume=204&spage=679&epage=683&date=1997&atitle=Positron+Lifetime+in+Elemental+Semiconductors+in+the+Generalized+Gradient+Approximationen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0031319847en_HK
dc.identifier.hkuros29828en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031319847&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume204en_HK
dc.identifier.issue2en_HK
dc.identifier.spage679en_HK
dc.identifier.epage683en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLiming, W=24401511900en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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