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Article: Snapback behaviour and its similarity to the switching behaviour in ultra-thin silicon dioxide films after hard breakdown

TitleSnapback behaviour and its similarity to the switching behaviour in ultra-thin silicon dioxide films after hard breakdown
Authors
Chen, TPTse, MSSun, CQFung, SLo, KF
Issue Date2001
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal Of Physics D: Applied Physics, 2001, v. 34 n. 17, p. L95-L98 How to Cite?
DOI: http://dx.doi.org/10.1088/0022-3727/34/17/101
AbstractThe snapback and switching behaviors with well defined conduction states were analyzed in the ramped-current and ramped-voltage I-V measurements of ultrathin silicon dioxide films after hard breakdown. The devices used in this study were large n-channel metal oxide semiconductor field effect transistor (MOSFET) structures with a gate oxide thickness of 4.2 nm. The current-voltage relationship of each conduction state involved in both the behaviours was found to follow a power law.
Persistent Identifierhttp://hdl.handle.net/10722/80410
ISSN
0022-3727
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.681
ISI Accession Number ID
WOS:000171429400001
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorSun, CQen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLo, KFen_HK
dc.date.accessioned2010-09-06T08:06:09Z-
dc.date.available2010-09-06T08:06:09Z-
dc.date.issued2001en_HK
dc.identifier.citationJournal Of Physics D: Applied Physics, 2001, v. 34 n. 17, p. L95-L98en_HK
dc.identifier.issn0022-3727en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80410-
dc.description.abstractThe snapback and switching behaviors with well defined conduction states were analyzed in the ramped-current and ramped-voltage I-V measurements of ultrathin silicon dioxide films after hard breakdown. The devices used in this study were large n-channel metal oxide semiconductor field effect transistor (MOSFET) structures with a gate oxide thickness of 4.2 nm. The current-voltage relationship of each conduction state involved in both the behaviours was found to follow a power law.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpden_HK
dc.relation.ispartofJournal of Physics D: Applied Physicsen_HK
dc.titleSnapback behaviour and its similarity to the switching behaviour in ultra-thin silicon dioxide films after hard breakdownen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-3727&volume=34&spage=L95&epage=L98&date=2001&atitle=Snapback+behaviour+and+its+similarity+to+the+switching+behaviour+in+ultra-thin+silicon+dioxide+films+after+hard+breakdownen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0022-3727/34/17/101en_HK
dc.identifier.scopuseid_2-s2.0-0035822976en_HK
dc.identifier.hkuros64918en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035822976&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume34en_HK
dc.identifier.issue17en_HK
dc.identifier.spageL95en_HK
dc.identifier.epageL98en_HK
dc.identifier.isiWOS:000171429400001-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridSun, CQ=7404248313en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLo, KF=7402101523en_HK
dc.identifier.issnl0022-3727-

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