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Conference Paper: Positron annihilation spectroscopic studies of 6H silicon carbide

TitlePositron annihilation spectroscopic studies of 6H silicon carbide
Authors
Keywords6H-SiC
Positron diffusion length
Positron lifetime technique
Issue Date2001
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 2001, v. 363-365, p. 120-122 How to Cite?
AbstractPositron lifetime measurements have been performed on p-type and n-type 6H-SiC with temperatures varying from 10K to 290K. The V CV Si divacancy is observed in both types of 6H-SiC where the V Si related defect is only found in the n-type material. Positron trapping into a defect with lifetime value close to the bulk was found to compete with positron trapping into V Si or V CV Si at temperatures lower than 80K. The positron diffusion length of the 1400°C annealed n-type 6H-SiC has also been measured at different temperatures with the use of a positron beam. Positron diffusion was found to be limited by acoustic phonon scattering at T=150-300K. However, at T=50-150K, D + follows T 2.12±0.02 and the details of the physical process is not yet known.
Persistent Identifierhttp://hdl.handle.net/10722/80405
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorHu, YFen_HK
dc.contributor.authorLam, CHen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWeng, HMen_HK
dc.date.accessioned2010-09-06T08:06:06Z-
dc.date.available2010-09-06T08:06:06Z-
dc.date.issued2001en_HK
dc.identifier.citationMaterials Science Forum, 2001, v. 363-365, p. 120-122en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80405-
dc.description.abstractPositron lifetime measurements have been performed on p-type and n-type 6H-SiC with temperatures varying from 10K to 290K. The V CV Si divacancy is observed in both types of 6H-SiC where the V Si related defect is only found in the n-type material. Positron trapping into a defect with lifetime value close to the bulk was found to compete with positron trapping into V Si or V CV Si at temperatures lower than 80K. The positron diffusion length of the 1400°C annealed n-type 6H-SiC has also been measured at different temperatures with the use of a positron beam. Positron diffusion was found to be limited by acoustic phonon scattering at T=150-300K. However, at T=50-150K, D + follows T 2.12±0.02 and the details of the physical process is not yet known.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subject6H-SiCen_HK
dc.subjectPositron diffusion lengthen_HK
dc.subjectPositron lifetime techniqueen_HK
dc.titlePositron annihilation spectroscopic studies of 6H silicon carbideen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=363-365&spage=120&epage=122&date=2001&atitle=Positron+Annihilation+Spectroscopic+Studies+of+6H+Silicon+Carbideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0035016812en_HK
dc.identifier.hkuros56854en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035016812&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume363-365en_HK
dc.identifier.spage120en_HK
dc.identifier.epage122en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridLam, CH=24525955200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK

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