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Article: GaN nanowires: CVD synthesis and properties

TitleGaN nanowires: CVD synthesis and properties
Authors
KeywordsGallium nitride
Nanostructures
Issue Date2006
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2006, v. 515 n. 3, p. 984-989 How to Cite?
AbstractThe growth of GaN nanowires from Ga and NH 3 sources in the flow of Ar carrier gas using a chemical vapor deposition (CVD) system was systematically studied. The substrates used were Si(111) and Si(100). Fabricated nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). We investigated the influence of growth temperature, catalyst used, Ga amount, and the ratio of Ar and NH 3 flow rates on the morphology and properties of GaN nanowires. We found that the best results were obtained for a growth temperature of 950 °C. Optimal catalysts were Au and metallic Ni, while the use of nickel nitrate was found to lead to formation of SiO x nanowire bunches in addition to GaN nanowires. For the optimal temperature and catalyst used, the influence of the Ga to N ratio on the nanowire growth was studied. It was found that different types of nanostructures are observed in relatively Ga-rich and in relatively N-rich conditions. Growth mechanisms of different types of nanowires, including the stacked-cone nanowires and the microscale structures formed by lateral growth under N-rich conditions, are discussed. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80404
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2010-09-06T08:06:05Z-
dc.date.available2010-09-06T08:06:05Z-
dc.date.issued2006en_HK
dc.identifier.citationThin Solid Films, 2006, v. 515 n. 3, p. 984-989en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80404-
dc.description.abstractThe growth of GaN nanowires from Ga and NH 3 sources in the flow of Ar carrier gas using a chemical vapor deposition (CVD) system was systematically studied. The substrates used were Si(111) and Si(100). Fabricated nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). We investigated the influence of growth temperature, catalyst used, Ga amount, and the ratio of Ar and NH 3 flow rates on the morphology and properties of GaN nanowires. We found that the best results were obtained for a growth temperature of 950 °C. Optimal catalysts were Au and metallic Ni, while the use of nickel nitrate was found to lead to formation of SiO x nanowire bunches in addition to GaN nanowires. For the optimal temperature and catalyst used, the influence of the Ga to N ratio on the nanowire growth was studied. It was found that different types of nanostructures are observed in relatively Ga-rich and in relatively N-rich conditions. Growth mechanisms of different types of nanowires, including the stacked-cone nanowires and the microscale structures formed by lateral growth under N-rich conditions, are discussed. © 2006 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectGallium nitrideen_HK
dc.subjectNanostructuresen_HK
dc.titleGaN nanowires: CVD synthesis and propertiesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=515&spage=984&epage=989&date=2006&atitle=GaN+nanowires:+CVD+synthesis+and+propertiesen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2006.07.085en_HK
dc.identifier.scopuseid_2-s2.0-33750475945en_HK
dc.identifier.hkuros124814en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33750475945&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume515en_HK
dc.identifier.issue3en_HK
dc.identifier.spage984en_HK
dc.identifier.epage989en_HK
dc.identifier.isiWOS:000242639600028-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridCai, XM=8923610200en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK

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