Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions

Abstract

GaN homoepitaxial growth by molecular-beam epitaxy under both excess gallium (Ga) and excess nitrogen (N) conditions is investigated. Based on two-dimensional island shape and surface step structures, we suggest the growth is kinetic-limited under the excess-Ga condition but diffusion-limited in the excess-N regime. The triangular GaN islands and double step bunching seen on surfaces prepared under excess-Ga are attributed to a difference in adatom attachment and/or site exchange rates between A and B steps, which is induced by surfactant Ga adlayers on GaN(0001). © 2006 The American Physical Society.