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Article: Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions

TitleOrigin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions
Authors
Issue Date2006
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2006, v. 74 n. 8 How to Cite?
AbstractGaN homoepitaxial growth by molecular-beam epitaxy under both excess gallium (Ga) and excess nitrogen (N) conditions is investigated. Based on two-dimensional island shape and surface step structures, we suggest the growth is kinetic-limited under the excess-Ga condition but diffusion-limited in the excess-N regime. The triangular GaN islands and double step bunching seen on surfaces prepared under excess-Ga are attributed to a difference in adatom attachment and/or site exchange rates between A and B steps, which is induced by surfactant Ga adlayers on GaN(0001). © 2006 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/80377
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorPang, EKYen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:05:47Z-
dc.date.available2010-09-06T08:05:47Z-
dc.date.issued2006en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2006, v. 74 n. 8en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80377-
dc.description.abstractGaN homoepitaxial growth by molecular-beam epitaxy under both excess gallium (Ga) and excess nitrogen (N) conditions is investigated. Based on two-dimensional island shape and surface step structures, we suggest the growth is kinetic-limited under the excess-Ga condition but diffusion-limited in the excess-N regime. The triangular GaN islands and double step bunching seen on surfaces prepared under excess-Ga are attributed to a difference in adatom attachment and/or site exchange rates between A and B steps, which is induced by surfactant Ga adlayers on GaN(0001). © 2006 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.titleOrigin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=74&spage=085314:1&epage=6&date=2006&atitle=Origin+of+triangular+island+shape+and+double-step+bunching+during+GaN+growth by+molecular-beam+epitaxy+under+excess+Ga+conditionsen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.74.085314en_HK
dc.identifier.scopuseid_2-s2.0-33747647959en_HK
dc.identifier.hkuros118171en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33747647959&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume74en_HK
dc.identifier.issue8en_HK
dc.identifier.isiWOS:000240238900059-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridPang, EKY=14121950700en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.citeulike1543486-

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