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Conference Paper: GaN thin films on SiC substrates studied using variable energy positron annihilation spectroscopy

TitleGaN thin films on SiC substrates studied using variable energy positron annihilation spectroscopy
Authors
KeywordsGaN
Heterojunction
Positron beams
SiC
Issue Date2001
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 2001, v. 363-365, p. 478-480 How to Cite?
AbstractA variety of GaN epilayers, grown on 6H-SiC substrates using different growth conditions, have been studied using variable energy positron annihilation spectroscopy. In the S-E plots, a peak structure in the S-parameter is seen which is related to the GaN/substrate heterojunction. The position of the peak is found to be much closer to the sample surface than expected from simple mean implantation depth arguments. This anomaly is attributed to the fact that there is a rectifying potential step that prevents diffusing positrons in the GaN from entering the SiC substrate. This effect has been successfully mimicked by inserting an artificial electric field into the thin interfacial region in the VEPFIT analysis.
Persistent Identifierhttp://hdl.handle.net/10722/80371
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorHu, YFen_HK
dc.contributor.authorShan, YYen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorTu, Jen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorTong, DSYen_HK
dc.date.accessioned2010-09-06T08:05:43Z-
dc.date.available2010-09-06T08:05:43Z-
dc.date.issued2001en_HK
dc.identifier.citationMaterials Science Forum, 2001, v. 363-365, p. 478-480en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80371-
dc.description.abstractA variety of GaN epilayers, grown on 6H-SiC substrates using different growth conditions, have been studied using variable energy positron annihilation spectroscopy. In the S-E plots, a peak structure in the S-parameter is seen which is related to the GaN/substrate heterojunction. The position of the peak is found to be much closer to the sample surface than expected from simple mean implantation depth arguments. This anomaly is attributed to the fact that there is a rectifying potential step that prevents diffusing positrons in the GaN from entering the SiC substrate. This effect has been successfully mimicked by inserting an artificial electric field into the thin interfacial region in the VEPFIT analysis.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subjectGaNen_HK
dc.subjectHeterojunctionen_HK
dc.subjectPositron beamsen_HK
dc.subjectSiCen_HK
dc.titleGaN thin films on SiC substrates studied using variable energy positron annihilation spectroscopyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=363-365&spage=478&epage=480&date=2001&atitle=GaN+Thin+Films+on+SiC+Substrates+Studied+Using+Variable+Energy+Positron+Annihilation+Spectroscopyen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailCheung, SH: singhang@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityCheung, SH=rp00590en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0034998303en_HK
dc.identifier.hkuros56858en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034998303&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume363-365en_HK
dc.identifier.spage478en_HK
dc.identifier.epage480en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridCheung, SH=7202473508en_HK
dc.identifier.scopusauthoridTu, J=35335681000en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridTong, DSY=35335318400en_HK

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