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Article: Formation of titanium nitride barrier layer in nickel-titanium shape memory alloys by nitrogen plasma immersion ion implantation for better corrosion resistance

TitleFormation of titanium nitride barrier layer in nickel-titanium shape memory alloys by nitrogen plasma immersion ion implantation for better corrosion resistance
Authors
KeywordsCorrosion resistance
Hardness
Nickel-titanium shape memory alloy
Plasma immersion ion implantation
Titanium nitride
Issue Date2005
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2005, v. 488 n. 1-2, p. 20-25 How to Cite?
AbstractNickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants due to their super-elasticity and shape memory properties. However, the materials are vulnerable to surface corrosion and the most serious issue is out-diffusion of toxic Ni ions from the substrate into body tissues and fluids. In this paper, we describe our fabrication of TiN barrier layers in NiTi by nitrogen plasma immersion ion implantation followed with vacuum annealing at 450°C or 600°C. Our results show that the barrier layer is not only mechanically stronger than the NiTi substrate, but also is effective in impeding the out-diffusion of Ni from the substrate. Among the samples, the 450°C-annealed TiN barrier layer possesses the highest mechanical strength and best Ni out-diffusion impeding ability. The enhancement can be attributed to the consolidation of the Ti-N layer resulting from optimal diffusion at 450°C. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/79688
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorPoon, RWYen_HK
dc.contributor.authorHo, JPYen_HK
dc.contributor.authorLiu, Xen_HK
dc.contributor.authorChung, CYen_HK
dc.contributor.authorChu, PKen_HK
dc.contributor.authorYeung, KWKen_HK
dc.contributor.authorLu, WWen_HK
dc.contributor.authorCheung, KMCen_HK
dc.date.accessioned2010-09-06T07:57:28Z-
dc.date.available2010-09-06T07:57:28Z-
dc.date.issued2005en_HK
dc.identifier.citationThin Solid Films, 2005, v. 488 n. 1-2, p. 20-25en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/79688-
dc.description.abstractNickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants due to their super-elasticity and shape memory properties. However, the materials are vulnerable to surface corrosion and the most serious issue is out-diffusion of toxic Ni ions from the substrate into body tissues and fluids. In this paper, we describe our fabrication of TiN barrier layers in NiTi by nitrogen plasma immersion ion implantation followed with vacuum annealing at 450°C or 600°C. Our results show that the barrier layer is not only mechanically stronger than the NiTi substrate, but also is effective in impeding the out-diffusion of Ni from the substrate. Among the samples, the 450°C-annealed TiN barrier layer possesses the highest mechanical strength and best Ni out-diffusion impeding ability. The enhancement can be attributed to the consolidation of the Ti-N layer resulting from optimal diffusion at 450°C. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectCorrosion resistanceen_HK
dc.subjectHardnessen_HK
dc.subjectNickel-titanium shape memory alloyen_HK
dc.subjectPlasma immersion ion implantationen_HK
dc.subjectTitanium nitrideen_HK
dc.titleFormation of titanium nitride barrier layer in nickel-titanium shape memory alloys by nitrogen plasma immersion ion implantation for better corrosion resistanceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=488&issue=1-2&spage=20&epage=25&date=2005&atitle=Formation+of+titanium+nitride+barrier+layer+in+nickel-titanium+shape+memory+alloys+by+nitrogen+plasma+immersion+ion+implantation+for+better+corrosion+resistanceen_HK
dc.identifier.emailYeung, KWK:wkkyeung@hkucc.hku.hken_HK
dc.identifier.emailLu, WW:wwlu@hku.hken_HK
dc.identifier.emailCheung, KMC:cheungmc@hku.hken_HK
dc.identifier.authorityYeung, KWK=rp00309en_HK
dc.identifier.authorityLu, WW=rp00411en_HK
dc.identifier.authorityCheung, KMC=rp00387en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2005.04.002en_HK
dc.identifier.scopuseid_2-s2.0-23144441014en_HK
dc.identifier.hkuros124294en_HK
dc.identifier.hkuros192133-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-23144441014&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume488en_HK
dc.identifier.issue1-2en_HK
dc.identifier.spage20en_HK
dc.identifier.epage25en_HK
dc.identifier.isiWOS:000231435300004-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridPoon, RWY=34572161800en_HK
dc.identifier.scopusauthoridHo, JPY=7402650045en_HK
dc.identifier.scopusauthoridLiu, X=8603933800en_HK
dc.identifier.scopusauthoridChung, CY=8100842800en_HK
dc.identifier.scopusauthoridChu, PK=36040705700en_HK
dc.identifier.scopusauthoridYeung, KWK=13309584700en_HK
dc.identifier.scopusauthoridLu, WW=7404215221en_HK
dc.identifier.scopusauthoridCheung, KMC=7402406754en_HK

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