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Article: Effects of water plasma immersion ion implantation on surface electrochemical behavior of NiTi shape memory alloys in simulated body fluids
Title | Effects of water plasma immersion ion implantation on surface electrochemical behavior of NiTi shape memory alloys in simulated body fluids |
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Authors | |
Keywords | Electrochemical impedance spectroscopy NiTi Plasma immersion ion implantation Water plasma immersion ion implantation |
Issue Date | 2007 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc |
Citation | Applied Surface Science, 2007, v. 253 n. 6, p. 3154-3159 How to Cite? |
Abstract | Water plasma immersion ion implantation (PIII) was conducted on orthopedic NiTi shape memory alloy to enhance the surface electrochemical characteristics. The surface composition of the NiTi alloy before and after H2O-PIII was determined by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) was utilized to determine the roughness and morphology of the NiTi samples. Potentiodynamic polarization tests and electrochemical impedance spectroscopy (EIS) were carried out to investigate the surface electrochemical behavior of the control and H2O-PIII NiTi samples in simulated body fluids (SBF) at 37 °C as well as the mechanism. The H2O-PIII NiTi sample showed a higher breakdown potential (Eb) than the control sample. Based on the AFM results, two different physical models with related equivalent electrical circuits were obtained to fit the EIS data and explain the surface electrochemical behavior of NiTi in SBF. The simulation results demonstrate that the higher resistance of the oxide layer produced by H2O-PIII is primarily responsible for the improvement in the surface corrosion resistance. © 2006 Elsevier B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/79626 |
ISSN | 2023 Impact Factor: 6.3 2023 SCImago Journal Rankings: 1.210 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Liu, XM | en_HK |
dc.contributor.author | Wu, SL | en_HK |
dc.contributor.author | Chu, PK | en_HK |
dc.contributor.author | Chung, CY | en_HK |
dc.contributor.author | Chu, CL | en_HK |
dc.contributor.author | Yeung, KWK | en_HK |
dc.contributor.author | Lu, WW | en_HK |
dc.contributor.author | Cheung, KMC | en_HK |
dc.contributor.author | Luk, KDK | en_HK |
dc.date.accessioned | 2010-09-06T07:56:46Z | - |
dc.date.available | 2010-09-06T07:56:46Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Applied Surface Science, 2007, v. 253 n. 6, p. 3154-3159 | en_HK |
dc.identifier.issn | 0169-4332 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/79626 | - |
dc.description.abstract | Water plasma immersion ion implantation (PIII) was conducted on orthopedic NiTi shape memory alloy to enhance the surface electrochemical characteristics. The surface composition of the NiTi alloy before and after H2O-PIII was determined by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) was utilized to determine the roughness and morphology of the NiTi samples. Potentiodynamic polarization tests and electrochemical impedance spectroscopy (EIS) were carried out to investigate the surface electrochemical behavior of the control and H2O-PIII NiTi samples in simulated body fluids (SBF) at 37 °C as well as the mechanism. The H2O-PIII NiTi sample showed a higher breakdown potential (Eb) than the control sample. Based on the AFM results, two different physical models with related equivalent electrical circuits were obtained to fit the EIS data and explain the surface electrochemical behavior of NiTi in SBF. The simulation results demonstrate that the higher resistance of the oxide layer produced by H2O-PIII is primarily responsible for the improvement in the surface corrosion resistance. © 2006 Elsevier B.V. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc | en_HK |
dc.relation.ispartof | Applied Surface Science | en_HK |
dc.rights | Applied Surface Science. Copyright © Elsevier BV. | en_HK |
dc.subject | Electrochemical impedance spectroscopy | en_HK |
dc.subject | NiTi | en_HK |
dc.subject | Plasma immersion ion implantation | en_HK |
dc.subject | Water plasma immersion ion implantation | en_HK |
dc.title | Effects of water plasma immersion ion implantation on surface electrochemical behavior of NiTi shape memory alloys in simulated body fluids | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=253&issue=6&spage=3154&epage=9&date=2007&atitle=Effects+of+water+plasma+immersion+ion+implantation+on+surface+electrochemical+behavior+of+NiTi+shape+memory+alloys+in+simulated+body+fluids | en_HK |
dc.identifier.email | Yeung, KWK:wkkyeung@hkucc.hku.hk | en_HK |
dc.identifier.email | Lu, WW:wwlu@hku.hk | en_HK |
dc.identifier.email | Cheung, KMC:cheungmc@hku.hk | en_HK |
dc.identifier.email | Luk, KDK:hcm21000@hku.hk | en_HK |
dc.identifier.authority | Yeung, KWK=rp00309 | en_HK |
dc.identifier.authority | Lu, WW=rp00411 | en_HK |
dc.identifier.authority | Cheung, KMC=rp00387 | en_HK |
dc.identifier.authority | Luk, KDK=rp00333 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.apsusc.2006.07.008 | en_HK |
dc.identifier.scopus | eid_2-s2.0-33845768891 | en_HK |
dc.identifier.hkuros | 137235 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33845768891&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 253 | en_HK |
dc.identifier.issue | 6 | en_HK |
dc.identifier.spage | 3154 | en_HK |
dc.identifier.epage | 3159 | en_HK |
dc.identifier.isi | WOS:000243830000025 | - |
dc.publisher.place | Netherlands | en_HK |
dc.identifier.scopusauthorid | Liu, XM=8408205200 | en_HK |
dc.identifier.scopusauthorid | Wu, SL=15125218800 | en_HK |
dc.identifier.scopusauthorid | Chu, PK=36040705700 | en_HK |
dc.identifier.scopusauthorid | Chung, CY=8100842800 | en_HK |
dc.identifier.scopusauthorid | Chu, CL=7404345713 | en_HK |
dc.identifier.scopusauthorid | Yeung, KWK=13309584700 | en_HK |
dc.identifier.scopusauthorid | Lu, WW=7404215221 | en_HK |
dc.identifier.scopusauthorid | Cheung, KMC=7402406754 | en_HK |
dc.identifier.scopusauthorid | Luk, KDK=7201921573 | en_HK |
dc.identifier.issnl | 0169-4332 | - |