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Article: Strain-mediated patterning of surface nanostructure by the subsurface island array

TitleStrain-mediated patterning of surface nanostructure by the subsurface island array
Authors
KeywordsA1. Surface diffusion
A1. Surface nanostructure
A2. Phase field method
A3. Epitaxy
Issue Date2004
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2004, v. 269 n. 2-4, p. 262-269 How to Cite?
AbstractA continuous phase field simulation is carried out to study the strain-mediated patterning of surface nanostructure by the subsurface island array. It is interesting to find that there exists a competition between the contributions to the self-organized process from the non-uniform surface stress and subsurface island array. Numerical simulations demonstrate that a tailored surface nanostructure can be obtained by tuning the inhomogeneous strain distribution induced by the subsurface island array, which is sensitive to the misfit strain, spacer layer thickness, geometry and spacing of embedded islands. The local self-assembling process of surface islands recovered from our numerical results is in agreement with the observation made in the recent experiments on the Ge/Si system with subsurface Ge islands array. © 2004 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/76205
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNi, Yen_HK
dc.contributor.authorSoh, AKen_HK
dc.contributor.authorHe, LHen_HK
dc.date.accessioned2010-09-06T07:18:39Z-
dc.date.available2010-09-06T07:18:39Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Crystal Growth, 2004, v. 269 n. 2-4, p. 262-269en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/76205-
dc.description.abstractA continuous phase field simulation is carried out to study the strain-mediated patterning of surface nanostructure by the subsurface island array. It is interesting to find that there exists a competition between the contributions to the self-organized process from the non-uniform surface stress and subsurface island array. Numerical simulations demonstrate that a tailored surface nanostructure can be obtained by tuning the inhomogeneous strain distribution induced by the subsurface island array, which is sensitive to the misfit strain, spacer layer thickness, geometry and spacing of embedded islands. The local self-assembling process of surface islands recovered from our numerical results is in agreement with the observation made in the recent experiments on the Ge/Si system with subsurface Ge islands array. © 2004 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.rightsJournal of Crystal Growth. Copyright © Elsevier BV.en_HK
dc.subjectA1. Surface diffusionen_HK
dc.subjectA1. Surface nanostructureen_HK
dc.subjectA2. Phase field methoden_HK
dc.subjectA3. Epitaxyen_HK
dc.titleStrain-mediated patterning of surface nanostructure by the subsurface island arrayen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=269&spage=262&epage=269&date=2004&atitle=Strain-mediated+patterning+of+surface+nanostructure+by+the+subsurface+island+arrayen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jcrysgro.2004.05.070en_HK
dc.identifier.scopuseid_2-s2.0-4344709607en_HK
dc.identifier.hkuros98345en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-4344709607&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume269en_HK
dc.identifier.issue2-4en_HK
dc.identifier.spage262en_HK
dc.identifier.epage269en_HK
dc.identifier.isiWOS:000223813300012-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridNi, Y=16836857400en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.scopusauthoridHe, LH=7403374517en_HK

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