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Article: Visible photoluminescence of co-sputtered Ge-Si duplex nanocrystals

TitleVisible photoluminescence of co-sputtered Ge-Si duplex nanocrystals
Authors
Issue Date2005
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2005, v. 81 n. 3, p. 459-463 How to Cite?
AbstractThe photoluminescence (PL) characteristics of co-sputtered Ge-Si duplex nanocrystal films were examined under excitation by a 325-nm HeCd laser, combined with Raman and Fourier-transform infrared reflection spectra analysis. A broad visible PL spectrum from the as-deposited Ge-Si nanocrystal films was observed in the wavelength range 350-700 nm. Basically, the PL spectrum can be considered to consist of two distinct parts originating from different emission mechanisms: (i) the spectrum in the range 350-520 nm, consisting of characteristic double peaks at 410 and 440 nm with PL intensities decreasing after vacuum annealing, probably due to vacancy defects in Si nanocrystals; and (ii) the spectrum in the range 520-700 nm, consisting of a characteristic peak at 550 nm with a PL intensity not affected by vacuum annealing, probably due to Ge-related interfacial defects. No size dependence of PL peak energy expected from quantum confinement effects was observed in the wavelength range investigated. However, with an increase of crystal size, the PL peak intensity in the blue zone decreased. The PL intensity is found to be strongly affected by silicon concentration. A film heated in air has a different PL mechanism from the as-deposited and vacuum-annealed films. © Springer-Verlag 2005.
Persistent Identifierhttp://hdl.handle.net/10722/75971
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, ZWen_HK
dc.contributor.authorNgan, AHWen_HK
dc.contributor.authorHua, WYen_HK
dc.contributor.authorMeng, XKen_HK
dc.date.accessioned2010-09-06T07:16:20Z-
dc.date.available2010-09-06T07:16:20Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2005, v. 81 n. 3, p. 459-463en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/75971-
dc.description.abstractThe photoluminescence (PL) characteristics of co-sputtered Ge-Si duplex nanocrystal films were examined under excitation by a 325-nm HeCd laser, combined with Raman and Fourier-transform infrared reflection spectra analysis. A broad visible PL spectrum from the as-deposited Ge-Si nanocrystal films was observed in the wavelength range 350-700 nm. Basically, the PL spectrum can be considered to consist of two distinct parts originating from different emission mechanisms: (i) the spectrum in the range 350-520 nm, consisting of characteristic double peaks at 410 and 440 nm with PL intensities decreasing after vacuum annealing, probably due to vacancy defects in Si nanocrystals; and (ii) the spectrum in the range 520-700 nm, consisting of a characteristic peak at 550 nm with a PL intensity not affected by vacuum annealing, probably due to Ge-related interfacial defects. No size dependence of PL peak energy expected from quantum confinement effects was observed in the wavelength range investigated. However, with an increase of crystal size, the PL peak intensity in the blue zone decreased. The PL intensity is found to be strongly affected by silicon concentration. A film heated in air has a different PL mechanism from the as-deposited and vacuum-annealed films. © Springer-Verlag 2005.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleVisible photoluminescence of co-sputtered Ge-Si duplex nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=81&spage=459&epage=463&date=2005&atitle=Visible+photoluminescence+of+co-sputtered+Ge-Si+duplex+nanocrystalsen_HK
dc.identifier.emailNgan, AHW:hwngan@hkucc.hku.hken_HK
dc.identifier.authorityNgan, AHW=rp00225en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-005-3278-1en_HK
dc.identifier.scopuseid_2-s2.0-21644439747en_HK
dc.identifier.hkuros99991en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21644439747&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue3en_HK
dc.identifier.spage459en_HK
dc.identifier.epage463en_HK
dc.identifier.isiWOS:000232116100004-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridXu, ZW=7405428896en_HK
dc.identifier.scopusauthoridNgan, AHW=7006827202en_HK
dc.identifier.scopusauthoridHua, WY=7101940262en_HK
dc.identifier.scopusauthoridMeng, XK=7401630110en_HK

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