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Article: Indentation-induced crystallisation in amorphous silicon thin films

TitleIndentation-induced crystallisation in amorphous silicon thin films
Authors
Issue Date2007
PublisherInderscience Publishers. The Journal's web site is located at http://www.inderscience.com/ijsurfse
Citation
International Journal of Surface Science and Engineering, 2007, v. 1 n. 2/3, p. 308-321 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/75664
ISSN
2021 Impact Factor: 0.944
2020 SCImago Journal Rankings: 0.292

 

DC FieldValueLanguage
dc.contributor.authorXu, Zen_HK
dc.contributor.authorNgan, AHWen_HK
dc.date.accessioned2010-09-06T07:13:22Z-
dc.date.available2010-09-06T07:13:22Z-
dc.date.issued2007en_HK
dc.identifier.citationInternational Journal of Surface Science and Engineering, 2007, v. 1 n. 2/3, p. 308-321en_HK
dc.identifier.issn1749-785Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/75664-
dc.languageengen_HK
dc.publisherInderscience Publishers. The Journal's web site is located at http://www.inderscience.com/ijsurfseen_HK
dc.relation.ispartofInternational Journal of Surface Science and Engineeringen_HK
dc.rightsInternational Journal of Surface Science and Engineering. Copyright © Inderscience Publishers.en_HK
dc.titleIndentation-induced crystallisation in amorphous silicon thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1749-785X&volume=1&issue=2/3&spage=308&epage=321&date=2007&atitle=Indentation-induced+crystallisation+in+amorphous+silicon+thin+filmsen_HK
dc.identifier.emailNgan, AHW: hwngan@hkucc.hku.hken_HK
dc.identifier.authorityNgan, AHW=rp00225en_HK
dc.identifier.hkuros142707en_HK
dc.identifier.issnl1749-785X-

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