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Article: The strength of submicron-sized materials

TitleThe strength of submicron-sized materials
Authors
KeywordsCreep
Nanoindentation
Yield strength
Issue Date2006
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/ijmpb/ijmpb.shtml
Citation
International Journal Of Modern Physics B, 2006, v. 20 n. 25-27, p. 3579-3586 How to Cite?
AbstractRecent rapid advancements in nano- and micro-machinery technologies call for an urgent need to understand the mechanical behaviour of materials of dimensions in the sub-micron regime. The initial yield strength of submicron crystals exhibits remarkable statistical scatter as well as dependence upon size and time under load. Submicron-sized materials are also found to creep many orders of magnitude faster than bulk counterparts. In this paper, the recent experimental evidence for these phenomena is reviewed. Theoretical explanation of these phenomena is also discussed. The statistical scatter and time dependence of the yield strength are interpreted by a scaling model derived from atomistic simulations. The results indicate that, within a certain load range, the strength of a sub-micron sized material is not deterministic and can only be described by a survival probability. The much faster creep in the submicron regime is interpreted in terms of the much shorter diffusion length compared to bulk creep. © World Scientific Publishing Company.
Persistent Identifierhttp://hdl.handle.net/10722/75611
ISSN
2015 Impact Factor: 0.85
2015 SCImago Journal Rankings: 0.338
References

 

DC FieldValueLanguage
dc.contributor.authorNgan, AHWen_HK
dc.contributor.authorWo, PCen_HK
dc.contributor.authorZuo, Len_HK
dc.contributor.authorLi, Hen_HK
dc.contributor.authorAfrin, Nen_HK
dc.date.accessioned2010-09-06T07:12:52Z-
dc.date.available2010-09-06T07:12:52Z-
dc.date.issued2006en_HK
dc.identifier.citationInternational Journal Of Modern Physics B, 2006, v. 20 n. 25-27, p. 3579-3586en_HK
dc.identifier.issn0217-9792en_HK
dc.identifier.urihttp://hdl.handle.net/10722/75611-
dc.description.abstractRecent rapid advancements in nano- and micro-machinery technologies call for an urgent need to understand the mechanical behaviour of materials of dimensions in the sub-micron regime. The initial yield strength of submicron crystals exhibits remarkable statistical scatter as well as dependence upon size and time under load. Submicron-sized materials are also found to creep many orders of magnitude faster than bulk counterparts. In this paper, the recent experimental evidence for these phenomena is reviewed. Theoretical explanation of these phenomena is also discussed. The statistical scatter and time dependence of the yield strength are interpreted by a scaling model derived from atomistic simulations. The results indicate that, within a certain load range, the strength of a sub-micron sized material is not deterministic and can only be described by a survival probability. The much faster creep in the submicron regime is interpreted in terms of the much shorter diffusion length compared to bulk creep. © World Scientific Publishing Company.en_HK
dc.languageengen_HK
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/ijmpb/ijmpb.shtmlen_HK
dc.relation.ispartofInternational Journal of Modern Physics Ben_HK
dc.subjectCreepen_HK
dc.subjectNanoindentationen_HK
dc.subjectYield strengthen_HK
dc.titleThe strength of submicron-sized materialsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0217-9792&volume=20&issue=25&spage=3579&epage=3586&date=2006&atitle=The+strength+of+submicron-sized+materialsen_HK
dc.identifier.emailNgan, AHW:hwngan@hkucc.hku.hken_HK
dc.identifier.authorityNgan, AHW=rp00225en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-33751294368en_HK
dc.identifier.hkuros127059en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33751294368&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue25-27en_HK
dc.identifier.spage3579en_HK
dc.identifier.epage3586en_HK
dc.publisher.placeSingaporeen_HK
dc.identifier.scopusauthoridNgan, AHW=7006827202en_HK
dc.identifier.scopusauthoridWo, PC=9433530200en_HK
dc.identifier.scopusauthoridZuo, L=36863503700en_HK
dc.identifier.scopusauthoridLi, H=26432017800en_HK
dc.identifier.scopusauthoridAfrin, N=21233405100en_HK

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