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Article: Phase field simulation of crack tip domain switching in ferroelectrics

TitlePhase field simulation of crack tip domain switching in ferroelectrics
Authors
Issue Date2007
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal Of Physics D: Applied Physics, 2007, v. 40 n. 4, p. 1175-1182 How to Cite?
AbstractThis paper presents a new application of the phase field method. Two-dimensional phase field simulations of domain switching in the crack tip vicinity of a crack embedded in a ferroelectric single crystal, which was subjected to mechanical and electric loading, have been carried out. Khachaturyan-Shatalov (KS) theory [1] was adopted to account for the elastic energy. The domain switching zones induced by the mechanical and electric loading were plotted. The stress field near the crack tip was also plotted to investigate the effect of domain switching on the crack. The obtained domain switching zones are in good agreement with reported theoretical predictions and experimental observations. The stress field shows that the positive electric field inhibits while the negative field promotes the crack propagation. © 2007 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/75601
ISSN
2015 Impact Factor: 2.772
2015 SCImago Journal Rankings: 0.682
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSong, YCen_HK
dc.contributor.authorSoh, AKen_HK
dc.contributor.authorNi, Yen_HK
dc.date.accessioned2010-09-06T07:12:46Z-
dc.date.available2010-09-06T07:12:46Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Physics D: Applied Physics, 2007, v. 40 n. 4, p. 1175-1182en_HK
dc.identifier.issn0022-3727en_HK
dc.identifier.urihttp://hdl.handle.net/10722/75601-
dc.description.abstractThis paper presents a new application of the phase field method. Two-dimensional phase field simulations of domain switching in the crack tip vicinity of a crack embedded in a ferroelectric single crystal, which was subjected to mechanical and electric loading, have been carried out. Khachaturyan-Shatalov (KS) theory [1] was adopted to account for the elastic energy. The domain switching zones induced by the mechanical and electric loading were plotted. The stress field near the crack tip was also plotted to investigate the effect of domain switching on the crack. The obtained domain switching zones are in good agreement with reported theoretical predictions and experimental observations. The stress field shows that the positive electric field inhibits while the negative field promotes the crack propagation. © 2007 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpden_HK
dc.relation.ispartofJournal of Physics D: Applied Physicsen_HK
dc.titlePhase field simulation of crack tip domain switching in ferroelectricsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1543-3080&volume=40 &issue=4&spage=1175&epage=1182&date=2007&atitle=Phase+field+simulation+of+crack+tip+domain+switching+in+ferroelectrics+en_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0022-3727/40/4/040en_HK
dc.identifier.scopuseid_2-s2.0-33947694649en_HK
dc.identifier.hkuros129020en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33947694649&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume40en_HK
dc.identifier.issue4en_HK
dc.identifier.spage1175en_HK
dc.identifier.epage1182en_HK
dc.identifier.isiWOS:000245274300041-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridSong, YC=12789342500en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.scopusauthoridNi, Y=16836857400en_HK
dc.identifier.citeulike1102512-

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