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Article: Conduction mechanisms in MOS gate dielectric films

TitleConduction mechanisms in MOS gate dielectric films
Authors
Issue Date2004
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2004, v. 44 n. 5, p. 709-718 How to Cite?
AbstractThis paper reviews the conduction mechanisms in the gate dielectric films of MOSFETs for VLSI and ULSI technologies. They include Fowler-Nordheim tunneling, internal Schottky (or Pool-Frenkel) effect, two-step (or trap-assisted) tunneling, shallow-trap-assisted tunneling, and band-to-band tunneling. The current transport in the gate dielectric films is manly controlled by film material composition, film processing conditions, film thickness, trap energy level and trap density in the films. In general, for a given gate dielectric film, the current transport behaviors are normally governed by one or two conduction mechanisms. © 2004 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/74038
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, BLen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorWong, Hen_HK
dc.date.accessioned2010-09-06T06:57:12Z-
dc.date.available2010-09-06T06:57:12Z-
dc.date.issued2004en_HK
dc.identifier.citationMicroelectronics Reliability, 2004, v. 44 n. 5, p. 709-718en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/74038-
dc.description.abstractThis paper reviews the conduction mechanisms in the gate dielectric films of MOSFETs for VLSI and ULSI technologies. They include Fowler-Nordheim tunneling, internal Schottky (or Pool-Frenkel) effect, two-step (or trap-assisted) tunneling, shallow-trap-assisted tunneling, and band-to-band tunneling. The current transport in the gate dielectric films is manly controlled by film material composition, film processing conditions, film thickness, trap energy level and trap density in the films. In general, for a given gate dielectric film, the current transport behaviors are normally governed by one or two conduction mechanisms. © 2004 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleConduction mechanisms in MOS gate dielectric filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=44&spage=709&epage=718&date=2004&atitle=Conduction+mechanisms+in+MOS+gate+dielectric+filmsen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2004.01.013en_HK
dc.identifier.scopuseid_2-s2.0-1842842335en_HK
dc.identifier.hkuros102531en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1842842335&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume44en_HK
dc.identifier.issue5en_HK
dc.identifier.spage709en_HK
dc.identifier.epage718en_HK
dc.identifier.isiWOS:000221250600001-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridYang, BL=24777588400en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridWong, H=7402864932en_HK

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