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Conference Paper: Off-state leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques

TitleOff-state leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques
Authors
Zeng, XLai, PTNg, WT
Issue Date1995
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee
Citation
The 9th Biennial Conference on Insulating Films on Semiconductors (INFOS '95), Villard-de-Lans, France, 7–10 June 1995. In Microelectronic Engineering, 1995, v. 28 n. 1-4, p. 97-100 How to Cite?
DOI: http://dx.doi.org/10.1016/0167-9317(95)00023-2
AbstractOff-state gate current of n-channel MOSFET's with OX, RONO, N2ON, and N2OG oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N2OG oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, the method of nitridizing pre-grown thermal oxide (N2ON) is more feasible than directly growing oxide in N2O ambient (N2OG) in view of gate current leakage, especially in leakage-sensitive applications, such as very-low-power battery-based circuits, DRAM cells ...
DescriptionThis journal vol. entitled: Insulating Films on Semiconductors, Villard-de-Lans, France, 7–10 June 1995
Persistent Identifierhttp://hdl.handle.net/10722/74036
ISSN
0167-9317
2023 Impact Factor: 2.6
2023 SCImago Journal Rankings: 0.503
ISI Accession Number ID
WOS:A1995RD49200021

 

DC FieldValueLanguage
dc.contributor.authorZeng, Xen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorNg, WTen_HK
dc.date.accessioned2010-09-06T06:57:10Z-
dc.date.available2010-09-06T06:57:10Z-
dc.date.issued1995en_HK
dc.identifier.citationThe 9th Biennial Conference on Insulating Films on Semiconductors (INFOS '95), Villard-de-Lans, France, 7–10 June 1995. In Microelectronic Engineering, 1995, v. 28 n. 1-4, p. 97-100-
dc.identifier.issn0167-9317en_HK
dc.identifier.urihttp://hdl.handle.net/10722/74036-
dc.descriptionThis journal vol. entitled: Insulating Films on Semiconductors, Villard-de-Lans, France, 7–10 June 1995-
dc.description.abstractOff-state gate current of n-channel MOSFET's with OX, RONO, N2ON, and N2OG oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N2OG oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, the method of nitridizing pre-grown thermal oxide (N2ON) is more feasible than directly growing oxide in N2O ambient (N2OG) in view of gate current leakage, especially in leakage-sensitive applications, such as very-low-power battery-based circuits, DRAM cells ...en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/meeen_HK
dc.relation.ispartofMicroelectronic Engineeringen_HK
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in . Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronic Engineering, v.28, n. 1-4, June 1995. DOI: 10.1016/0167-9317(95)00023-2en_HK
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleOff-state leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniquesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepostprint-
dc.identifier.doi10.1016/0167-9317(95)00023-2-
dc.identifier.scopuseid_2-s2.0-0029321699en_HK
dc.identifier.hkuros5505en_HK
dc.identifier.hkuros240604-
dc.identifier.volume28en_HK
dc.identifier.issue1-4en_HK
dc.identifier.spage97en_HK
dc.identifier.epage100en_HK
dc.identifier.isiWOS:A1995RD49200021-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridNg, WT=7401613512en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, Z=7405429249en_HK
dc.customcontrol.immutablesml 141023-
dc.identifier.issnl0167-9317-

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