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Article: Photoelectrical properties of Ba1-xLaxTiO3 thin-film resistor

TitlePhotoelectrical properties of Ba1-xLaxTiO3 thin-film resistor
Authors
Issue Date2000
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 2000, v. 86 n. 3, p. 226-230 How to Cite?
AbstractThin Ba1-xLaxTiO3 film is deposited on a SiO2/Si substrate by argon ion-beam sputtering technique. The optical and photoelectrical properties of the film are studied. The optical absorption spectrum of the film is measured and the bandgap of the film is then determined. Effects of applied voltage and illumination intensity on photocurrent of thin-film resistors with different spacing lengths are investigated, and results show that devices with shorter spacing have more linear I-V characteristics. Moreover, a study of heat treatment in O2 on the dark current of the resistor is performed, revealing that a heat treatment at 400 °C for an optimal time of 10 min can greatly improve the photosensitivity of the resistor by reducing its dark current.
Persistent Identifierhttp://hdl.handle.net/10722/73987
ISSN
2015 Impact Factor: 2.201
2015 SCImago Journal Rankings: 0.902
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorHuang, MQen_HK
dc.date.accessioned2010-09-06T06:56:42Z-
dc.date.available2010-09-06T06:56:42Z-
dc.date.issued2000en_HK
dc.identifier.citationSensors And Actuators, A: Physical, 2000, v. 86 n. 3, p. 226-230en_HK
dc.identifier.issn0924-4247en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73987-
dc.description.abstractThin Ba1-xLaxTiO3 film is deposited on a SiO2/Si substrate by argon ion-beam sputtering technique. The optical and photoelectrical properties of the film are studied. The optical absorption spectrum of the film is measured and the bandgap of the film is then determined. Effects of applied voltage and illumination intensity on photocurrent of thin-film resistors with different spacing lengths are investigated, and results show that devices with shorter spacing have more linear I-V characteristics. Moreover, a study of heat treatment in O2 on the dark current of the resistor is performed, revealing that a heat treatment at 400 °C for an optimal time of 10 min can greatly improve the photosensitivity of the resistor by reducing its dark current.en_HK
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_HK
dc.relation.ispartofSensors and Actuators, A: Physicalen_HK
dc.titlePhotoelectrical properties of Ba1-xLaxTiO3 thin-film resistoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0924-4247&volume=86&spage=226&epage=230&date=2000&atitle=Photoelectrical+Properties+of+Ba1-xLaxTiO3+thin-film+Resistoren_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0924-4247(00)00438-6en_HK
dc.identifier.scopuseid_2-s2.0-0034320741en_HK
dc.identifier.hkuros61907en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034320741&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue3en_HK
dc.identifier.spage226en_HK
dc.identifier.epage230en_HK
dc.identifier.isiWOS:000165174500013-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridLi, B=26643217800en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.scopusauthoridZeng, SH=7202412592en_HK
dc.identifier.scopusauthoridHuang, MQ=7404259759en_HK

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