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Article: MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC

TitleMOS characteristics of NO-grown oxynitrides on n-type 6H-SiC
Authors
Chakraborty, SLai, PTKwok, PCK
Issue Date2002
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2002, v. 42 n. 3, p. 455-458 How to Cite?
AbstractThe growth of high-quality thin oxynitrides in nitric oxide (NO) ambient on n-type 6H-SiC substrate is reported. The performance and reliability of NO-grown oxynitride are compared with those of NO-annealed, N2O-grown, N2O-annealed and N2-annealed oxides. NO-grown device shows the best interfacial properties and oxide reliability among all the samples. X-ray photoelectron spectroscopy analysis indicates the highest nitrogen pileup at the SiO2/SiC interface of NO-grown sample. Therefore, the best performance of NO-grown sample can be related to the fact that oxide growth in NO has the advantage of providing higher nitrogen accumulation at the SiO2/SiC interface and in the oxide bulk than the other growth techniques. © 2002 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/73930
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000175318700018
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChakraborty, Sen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorKwok, PCKen_HK
dc.date.accessioned2010-09-06T06:56:09Z-
dc.date.available2010-09-06T06:56:09Z-
dc.date.issued2002en_HK
dc.identifier.citationMicroelectronics Reliability, 2002, v. 42 n. 3, p. 455-458en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73930-
dc.description.abstractThe growth of high-quality thin oxynitrides in nitric oxide (NO) ambient on n-type 6H-SiC substrate is reported. The performance and reliability of NO-grown oxynitride are compared with those of NO-annealed, N2O-grown, N2O-annealed and N2-annealed oxides. NO-grown device shows the best interfacial properties and oxide reliability among all the samples. X-ray photoelectron spectroscopy analysis indicates the highest nitrogen pileup at the SiO2/SiC interface of NO-grown sample. Therefore, the best performance of NO-grown sample can be related to the fact that oxide growth in NO has the advantage of providing higher nitrogen accumulation at the SiO2/SiC interface and in the oxide bulk than the other growth techniques. © 2002 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleMOS characteristics of NO-grown oxynitrides on n-type 6H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=42&spage=455&epage=458&date=2002&atitle=MOS+characteristics+of+NO-grown+oxynitrides+on+n-type+6H-SiCen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0036496492en_HK
dc.identifier.hkuros70661en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036496492&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume42en_HK
dc.identifier.issue3en_HK
dc.identifier.spage455en_HK
dc.identifier.epage458en_HK
dc.identifier.isiWOS:000175318700018-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChakraborty, S=35577738500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridKwok, PCK=7101871278en_HK
dc.identifier.issnl0026-2714-

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