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Article: Geometrical shaping of InGaN light-emitting diodes by laser micromachining

TitleGeometrical shaping of InGaN light-emitting diodes by laser micromachining
Authors
KeywordsLaser micro-machining
Light-emitting diodes(LEDs)
Issue Date2009
PublisherIEEE.
Citation
Ieee Photonics Technology Letters, 2009, v. 21 n. 15, p. 1078-1080 How to Cite?
AbstractGeometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The sapphire substrate is shaped with inclined sidewalls at 50, serving as a prism favoring light redirection for out-coupling from the top window. Compared to conventional cuboid LEDs with a calculated light extraction efficiency next of 18.3%, these shaped LEDs offers a pronounced increase in next of up to 85.2%, verified by experimental results. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/73893
ISSN
2015 Impact Factor: 1.945
2015 SCImago Journal Rankings: 1.433
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7121/06E
Funding Information:

This work was supported by a CERG grant of the Research Grant Council of Hong Kong (Project HKU 7121/06E).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorFu, WYen_HK
dc.contributor.authorHui, KNen_HK
dc.contributor.authorWang, XHen_HK
dc.contributor.authorWong, KKYen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-09-06T06:55:47Z-
dc.date.available2010-09-06T06:55:47Z-
dc.date.issued2009en_HK
dc.identifier.citationIeee Photonics Technology Letters, 2009, v. 21 n. 15, p. 1078-1080en_HK
dc.identifier.issn1041-1135en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73893-
dc.description.abstractGeometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The sapphire substrate is shaped with inclined sidewalls at 50, serving as a prism favoring light redirection for out-coupling from the top window. Compared to conventional cuboid LEDs with a calculated light extraction efficiency next of 18.3%, these shaped LEDs offers a pronounced increase in next of up to 85.2%, verified by experimental results. © 2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Photonics Technology Lettersen_HK
dc.rightsIEEE Photonics Technology Letters. Copyright © IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectLaser micro-machiningen_HK
dc.subjectLight-emitting diodes(LEDs)en_HK
dc.titleGeometrical shaping of InGaN light-emitting diodes by laser micromachiningen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1041-1135&volume=21&issue=15&spage=1078&epage=1080 &date=2009&atitle=Geometrical+shaping+of+InGaN+light-emitting+diodes+by+laser+micromachiningen_HK
dc.identifier.emailWong, KKY:kywong@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityWong, KKY=rp00189en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/LPT.2009.2022751en_HK
dc.identifier.scopuseid_2-s2.0-70349654012en_HK
dc.identifier.hkuros164124en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70349654012&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume21en_HK
dc.identifier.issue15en_HK
dc.identifier.spage1078en_HK
dc.identifier.epage1080en_HK
dc.identifier.isiWOS:000268169600013-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectMicrometer and nanometer scale GaN emissive devices at visible and ultraviolet wavelengths-
dc.identifier.scopusauthoridFu, WY=24481323900en_HK
dc.identifier.scopusauthoridHui, KN=12139840100en_HK
dc.identifier.scopusauthoridWang, XH=34168501000en_HK
dc.identifier.scopusauthoridWong, KKY=36456599700en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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