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Article: Mositure-sensitive field-effect transistors using Sio2/Si3N4/A1203 gate structure

TitleMositure-sensitive field-effect transistors using Sio2/Si3N4/A1203 gate structure
Authors
Issue Date1999
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sms
Citation
Smart Materials and Structures, 1999, v. 8, p. 274-277 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/73887
ISSN
2015 Impact Factor: 2.769
2015 SCImago Journal Rankings: 1.171

 

DC FieldValueLanguage
dc.contributor.authorChakraborty, Ken_HK
dc.contributor.authorNemoto, Ken_HK
dc.contributor.authorHara, Ken_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-09-06T06:55:43Z-
dc.date.available2010-09-06T06:55:43Z-
dc.date.issued1999en_HK
dc.identifier.citationSmart Materials and Structures, 1999, v. 8, p. 274-277en_HK
dc.identifier.issn0964-1726en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73887-
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/smsen_HK
dc.relation.ispartofSmart Materials and Structuresen_HK
dc.titleMositure-sensitive field-effect transistors using Sio2/Si3N4/A1203 gate structureen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0964-1726&volume=8&spage=274&epage=277&date=1999&atitle=Mositure-sensitive+field-effect+transistors+using+Sio2/Si3N4/A1203+gate+structureen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.hkuros44806en_HK

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