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Article: Modelling the optical constants of Si xGe 1-x alloys in the range 1.7-5.6 eV

TitleModelling the optical constants of Si xGe 1-x alloys in the range 1.7-5.6 eV
Authors
Issue Date2001
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2001, v. 16 n. 2, p. 59-65 How to Cite?
AbstractOptical constants of Si xGe 1-x alloys are modelled over the spectral range from 0.7 eV to 5.6 eV for all compositions 0≤x≤1. The employed model is the modified Adachi's model, which utilizes variable line broadening instead of the conventional Lorentzian one. The model takes into account transitions at the indirect band gap E g id, and critical points E 0, E 0+Δ 0, E 1, E 1+Δ 1, E′ 0, E 2(X), and E 2(Σ). Excitonic effects are not considered. The model parameters are determined using a global optimization routine, namely an acceptance-probability-controlled simulated annealing algorithm. Excellent agreement with the experimental data is obtained in the entire investigated energy and composition ranges. The obtained relative root mean square errors are below 4.5% and 6.5% for the real and imaginary parts of the index of refraction, respectively.
Persistent Identifierhttp://hdl.handle.net/10722/73881
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2010-09-06T06:55:40Z-
dc.date.available2010-09-06T06:55:40Z-
dc.date.issued2001en_HK
dc.identifier.citationSemiconductor Science And Technology, 2001, v. 16 n. 2, p. 59-65en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73881-
dc.description.abstractOptical constants of Si xGe 1-x alloys are modelled over the spectral range from 0.7 eV to 5.6 eV for all compositions 0≤x≤1. The employed model is the modified Adachi's model, which utilizes variable line broadening instead of the conventional Lorentzian one. The model takes into account transitions at the indirect band gap E g id, and critical points E 0, E 0+Δ 0, E 1, E 1+Δ 1, E′ 0, E 2(X), and E 2(Σ). Excitonic effects are not considered. The model parameters are determined using a global optimization routine, namely an acceptance-probability-controlled simulated annealing algorithm. Excellent agreement with the experimental data is obtained in the entire investigated energy and composition ranges. The obtained relative root mean square errors are below 4.5% and 6.5% for the real and imaginary parts of the index of refraction, respectively.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleModelling the optical constants of Si xGe 1-x alloys in the range 1.7-5.6 eVen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=16&spage=59&epage=65&date=2001&atitle=Modeling+the+optical+constants+of+SixGe1-x+alloys+in+the+range+1.7-5.6+eVen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/16/2/301en_HK
dc.identifier.scopuseid_2-s2.0-0342419449en_HK
dc.identifier.hkuros63762en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0342419449&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue2en_HK
dc.identifier.spage59en_HK
dc.identifier.epage65en_HK
dc.identifier.isiWOS:000167039300003-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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