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Article: A reliability study on green InGaN-GaN light-emitting diodes

TitleA reliability study on green InGaN-GaN light-emitting diodes
Authors
KeywordsLight-emitting diode (LED)
Reliability
Issue Date2009
PublisherIEEE.
Citation
Ieee Photonics Technology Letters, 2009, v. 21 n. 19, p. 1429-1431 How to Cite?
AbstractIn this letter, the reliability of green InGaN-GaN light-emitting diodes (LEDs) has been analyzed by correlating the defect density of wafers with various device parameters, including leakage current, 1/f noise, and degradation rate. It was found that as the wavelength of green LEDs increases from 520 to 550 nm by increasing the indium content in the quantum wells, the defect density also increases, thus leading to larger leakage current, enhanced noise magnitude, and shortened device lifetime. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/73854
ISSN
2015 Impact Factor: 1.945
2015 SCImago Journal Rankings: 1.433
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, ZLen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-09-06T06:55:24Z-
dc.date.available2010-09-06T06:55:24Z-
dc.date.issued2009en_HK
dc.identifier.citationIeee Photonics Technology Letters, 2009, v. 21 n. 19, p. 1429-1431en_HK
dc.identifier.issn1041-1135en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73854-
dc.description.abstractIn this letter, the reliability of green InGaN-GaN light-emitting diodes (LEDs) has been analyzed by correlating the defect density of wafers with various device parameters, including leakage current, 1/f noise, and degradation rate. It was found that as the wavelength of green LEDs increases from 520 to 550 nm by increasing the indium content in the quantum wells, the defect density also increases, thus leading to larger leakage current, enhanced noise magnitude, and shortened device lifetime. © 2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Photonics Technology Lettersen_HK
dc.rightsIEEE Photonics Technology Letters. Copyright © IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectLight-emitting diode (LED)en_HK
dc.subjectReliabilityen_HK
dc.titleA reliability study on green InGaN-GaN light-emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1041-1135&volume=21&issue=19&spage=1429 &epage= 1431 &date=2009&atitle=A+reliability+study+on+green+InGaN/GaN+light-emitting+diodesen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/LPT.2009.2028155en_HK
dc.identifier.scopuseid_2-s2.0-70349588448en_HK
dc.identifier.hkuros164100en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70349588448&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume21en_HK
dc.identifier.issue19en_HK
dc.identifier.spage1429en_HK
dc.identifier.epage1431en_HK
dc.identifier.isiWOS:000270037200011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, ZL=34167922900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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