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Article: High-k gate stack HfxTi1-xON/SiO2 for SiC MOS devices

TitleHigh-k gate stack HfxTi1-xON/SiO2 for SiC MOS devices
Authors
Issue Date2008
PublisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522
Citation
Journal Of Materials Science: Materials In Electronics, 2008, v. 19 n. 8-9, p. 894-897 How to Cite?
AbstractIn order to reduce the electric field in the gate dielectric and thus solve the reliability problem, high dielectric-constant (k ) gate dielectrics HfxTi1-xO2 and HfxTi1-xON were applied in SiC metal-oxide-semiconductor (MOS) devices for the first time. An ultra-thin thermally grown SiO2 was used as an interlayer between SiC and the high-k materials to block electron injection into the low-barrier high-k materials. Incorporating nitrogen (by sputtering in an Ar/N2 ambient) into the hafnium-titanium oxide stacked with a SiO2 interlayer (HfxTi1-x O2/SiO2) resulted in better gate dielectric for MOS capacitor, such as less oxide charges and better interface quality. Incorporation of nitrogen also increased the dielectric constant of the oxide, but caused higher dielectric leakage, which was suppressed by the SiO2 interlayer. © Springer Science+Business Media, LLC 2008.
Persistent Identifierhttp://hdl.handle.net/10722/73840
ISSN
2015 Impact Factor: 1.798
2015 SCImago Journal Rankings: 0.553
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLin, LMen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-09-06T06:55:16Z-
dc.date.available2010-09-06T06:55:16Z-
dc.date.issued2008en_HK
dc.identifier.citationJournal Of Materials Science: Materials In Electronics, 2008, v. 19 n. 8-9, p. 894-897en_HK
dc.identifier.issn0957-4522en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73840-
dc.description.abstractIn order to reduce the electric field in the gate dielectric and thus solve the reliability problem, high dielectric-constant (k ) gate dielectrics HfxTi1-xO2 and HfxTi1-xON were applied in SiC metal-oxide-semiconductor (MOS) devices for the first time. An ultra-thin thermally grown SiO2 was used as an interlayer between SiC and the high-k materials to block electron injection into the low-barrier high-k materials. Incorporating nitrogen (by sputtering in an Ar/N2 ambient) into the hafnium-titanium oxide stacked with a SiO2 interlayer (HfxTi1-x O2/SiO2) resulted in better gate dielectric for MOS capacitor, such as less oxide charges and better interface quality. Incorporation of nitrogen also increased the dielectric constant of the oxide, but caused higher dielectric leakage, which was suppressed by the SiO2 interlayer. © Springer Science+Business Media, LLC 2008.en_HK
dc.languageengen_HK
dc.publisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522en_HK
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_HK
dc.titleHigh-k gate stack HfxTi1-xON/SiO2 for SiC MOS devicesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4522&volume=19&spage=894&epage=897&date=2008&atitle=High-k+gate+stack+HfxTi1-xON/SiO2+for+SiC+MOS+devicesen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s10854-008-9623-3en_HK
dc.identifier.scopuseid_2-s2.0-44149100290en_HK
dc.identifier.hkuros150300en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44149100290&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume19en_HK
dc.identifier.issue8-9en_HK
dc.identifier.spage894en_HK
dc.identifier.epage897en_HK
dc.identifier.isiWOS:000255879000040-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLin, LM=8642604900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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