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Article: Degradation characteristics and light-induced effects of polymer thin-film transistors

TitleDegradation characteristics and light-induced effects of polymer thin-film transistors
Authors
KeywordsField-effect mobility
Semiconducting polymer
Stability
Thin-film transistor
Issue Date2007
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2007, v. 515 n. 11, p. 4808-4811 How to Cite?
AbstractPolymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) have been fabricated by spin-coating process and characterized. The electrical characteristics of the devices stored in dry air show obvious degradation with a smaller mobility due to oxygen effect, and lower threshold voltage. The devices present good optical response in low-light condition and optically induced memory effects, demonstrating their use as promising smart light-detection devices. Moreover, solution preparation, deposition and device measurements have been all performed in the air for the purpose of large-area applications. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/73792
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_HK
dc.contributor.authorPeng, JBen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorYang, KXen_HK
dc.contributor.authorCao, Yen_HK
dc.date.accessioned2010-09-06T06:54:48Z-
dc.date.available2010-09-06T06:54:48Z-
dc.date.issued2007en_HK
dc.identifier.citationThin Solid Films, 2007, v. 515 n. 11, p. 4808-4811en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73792-
dc.description.abstractPolymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) have been fabricated by spin-coating process and characterized. The electrical characteristics of the devices stored in dry air show obvious degradation with a smaller mobility due to oxygen effect, and lower threshold voltage. The devices present good optical response in low-light condition and optically induced memory effects, demonstrating their use as promising smart light-detection devices. Moreover, solution preparation, deposition and device measurements have been all performed in the air for the purpose of large-area applications. © 2006 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectField-effect mobilityen_HK
dc.subjectSemiconducting polymeren_HK
dc.subjectStabilityen_HK
dc.subjectThin-film transistoren_HK
dc.titleDegradation characteristics and light-induced effects of polymer thin-film transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=515&spage=4808&epage=4811&date=2007&atitle=Degradation+characteristics+and+light-induced+effects+of+polymer+thin-film+transistorsen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2006.11.026en_HK
dc.identifier.scopuseid_2-s2.0-33847107674en_HK
dc.identifier.hkuros135370en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33847107674&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume515en_HK
dc.identifier.issue11en_HK
dc.identifier.spage4808en_HK
dc.identifier.epage4811en_HK
dc.identifier.isiWOS:000245259600043-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridLiu, YR=36062331200en_HK
dc.identifier.scopusauthoridPeng, JB=7401958759en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridYang, KX=36859174900en_HK
dc.identifier.scopusauthoridCao, Y=36042143300en_HK

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