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Article: ZnSe heterocrystalline junctions based on zinc blende-wurtzite polytypism

TitleZnSe heterocrystalline junctions based on zinc blende-wurtzite polytypism
Authors
KeywordsCharge accumulation
Convergent-beam electron diffraction
Electrical transport measurements
Experimental platform
Ideal model
Issue Date2010
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/
Citation
Journal Of Physical Chemistry C, 2010, v. 114 n. 3, p. 1411-1415 How to Cite?
Abstract
ZnSe zinc blende-wurtzite (ZB-WZ) heterocrystalline junctions were successfully fabricated via pressure variation during the thermal evaporation process and characterized using electron microscopy techniques. Two types of ZB-WZ junction configurations were observed, and the orientation relationships, denoted as [111̄] ZB //[0001]WZ (type I) and ±[111] ZB//[0001] WZ(type II), respectively, were determined in detail by systematic parallel beam selected area electron diffraction combined with stereographic projections. The relatively weak polarities on both sides of such junctions were also detected using convergent beam electron diffraction combined with simulation. Different from the ideal models suggested by the theoretical studies on the (111) ZB-(0001) WZinterface of ZnSe (even other II-VI semiconductors), the present results indicate the existence of the polarity reversal across the junctions, which may result in charge accumulations around the interfaces. Therefore, it offers an interesting real system for theoretical investigation on such polytypic interface and also an appropriate experimental platform for further electrical transport measurement across these junctions. Copyright © 2010 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/73700
ISSN
2013 Impact Factor: 4.835
ISI Accession Number ID
Funding AgencyGrant Number
Program for New Century Excellent Talents in UniversityNCET-07-0640
Research Fund for the Doctoral Program of Higher Education of China20090141110059
National Fund for Talent Training in Basic ScienceJ0830310
National University Students Training in Scientific Research Program of MOE081048611
University Development Fund (UDF)
University of Hong Kong
Funding Information:

This work was financially supported by the Program for New Century Excellent Talents in University (NCET-07-0640), Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090141110059), National Fund for Talent Training in Basic Science (Grant No. J0830310), and National University Students Training in Scientific Research Program of MOE (Grant No. 081048611), China. W.C.H.C. is thankful for the support by the University Development Fund (UDF) and the seed funding of the University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorJin, Len_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorJia, Sen_HK
dc.contributor.authorJiang, Qen_HK
dc.contributor.authorYan, Xen_HK
dc.contributor.authorLu, Pen_HK
dc.contributor.authorCai, Yen_HK
dc.contributor.authorDeng, Len_HK
dc.contributor.authorChoy, WCHen_HK
dc.date.accessioned2010-09-06T06:53:55Z-
dc.date.available2010-09-06T06:53:55Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Physical Chemistry C, 2010, v. 114 n. 3, p. 1411-1415en_HK
dc.identifier.issn1932-7447en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73700-
dc.description.abstractZnSe zinc blende-wurtzite (ZB-WZ) heterocrystalline junctions were successfully fabricated via pressure variation during the thermal evaporation process and characterized using electron microscopy techniques. Two types of ZB-WZ junction configurations were observed, and the orientation relationships, denoted as [111̄] ZB //[0001]WZ (type I) and ±[111] ZB//[0001] WZ(type II), respectively, were determined in detail by systematic parallel beam selected area electron diffraction combined with stereographic projections. The relatively weak polarities on both sides of such junctions were also detected using convergent beam electron diffraction combined with simulation. Different from the ideal models suggested by the theoretical studies on the (111) ZB-(0001) WZinterface of ZnSe (even other II-VI semiconductors), the present results indicate the existence of the polarity reversal across the junctions, which may result in charge accumulations around the interfaces. Therefore, it offers an interesting real system for theoretical investigation on such polytypic interface and also an appropriate experimental platform for further electrical transport measurement across these junctions. Copyright © 2010 American Chemical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/en_HK
dc.relation.ispartofJournal of Physical Chemistry Cen_HK
dc.subjectCharge accumulation-
dc.subjectConvergent-beam electron diffraction-
dc.subjectElectrical transport measurements-
dc.subjectExperimental platform-
dc.subjectIdeal model-
dc.titleZnSe heterocrystalline junctions based on zinc blende-wurtzite polytypismen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1932-7447&volume=114&issue=3&spage=1411&epage=1415&date=2010&atitle=ZnSe+heterocrystalline+junctions+based+on+zinc+blende-wurtzite+polytypismen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp909182een_HK
dc.identifier.scopuseid_2-s2.0-77249086763en_HK
dc.identifier.hkuros169622en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77249086763&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume114en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1411en_HK
dc.identifier.epage1415en_HK
dc.identifier.isiWOS:000273672500003-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJin, L=54395590000en_HK
dc.identifier.scopusauthoridWang, J=7701309180en_HK
dc.identifier.scopusauthoridJia, S=24466483100en_HK
dc.identifier.scopusauthoridJiang, Q=48661306800en_HK
dc.identifier.scopusauthoridYan, X=55197472700en_HK
dc.identifier.scopusauthoridLu, P=55041428300en_HK
dc.identifier.scopusauthoridCai, Y=35239494900en_HK
dc.identifier.scopusauthoridDeng, L=35239500200en_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK

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