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Article: ZnSe heterocrystalline junctions based on zinc blende-wurtzite polytypism
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TitleZnSe heterocrystalline junctions based on zinc blende-wurtzite polytypism
 
AuthorsJin, L2 1
Wang, J2
Jia, S2
Jiang, Q2
Yan, X2
Lu, P2
Cai, Y2
Deng, L2
Choy, WCH1
 
KeywordsCharge accumulation
Convergent-beam electron diffraction
Electrical transport measurements
Experimental platform
Ideal model
 
Issue Date2010
 
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/
 
CitationJournal Of Physical Chemistry C, 2010, v. 114 n. 3, p. 1411-1415 [How to Cite?]
DOI: http://dx.doi.org/10.1021/jp909182e
 
AbstractZnSe zinc blende-wurtzite (ZB-WZ) heterocrystalline junctions were successfully fabricated via pressure variation during the thermal evaporation process and characterized using electron microscopy techniques. Two types of ZB-WZ junction configurations were observed, and the orientation relationships, denoted as [111̄] ZB //[0001]WZ (type I) and ±[111] ZB//[0001] WZ(type II), respectively, were determined in detail by systematic parallel beam selected area electron diffraction combined with stereographic projections. The relatively weak polarities on both sides of such junctions were also detected using convergent beam electron diffraction combined with simulation. Different from the ideal models suggested by the theoretical studies on the (111) ZB-(0001) WZinterface of ZnSe (even other II-VI semiconductors), the present results indicate the existence of the polarity reversal across the junctions, which may result in charge accumulations around the interfaces. Therefore, it offers an interesting real system for theoretical investigation on such polytypic interface and also an appropriate experimental platform for further electrical transport measurement across these junctions. Copyright © 2010 American Chemical Society.
 
ISSN1932-7447
2013 Impact Factor: 4.835
 
DOIhttp://dx.doi.org/10.1021/jp909182e
 
ISI Accession Number IDWOS:000273672500003
Funding AgencyGrant Number
Program for New Century Excellent Talents in UniversityNCET-07-0640
Research Fund for the Doctoral Program of Higher Education of China20090141110059
National Fund for Talent Training in Basic ScienceJ0830310
National University Students Training in Scientific Research Program of MOE081048611
University Development Fund (UDF)
University of Hong Kong
Funding Information:

This work was financially supported by the Program for New Century Excellent Talents in University (NCET-07-0640), Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090141110059), National Fund for Talent Training in Basic Science (Grant No. J0830310), and National University Students Training in Scientific Research Program of MOE (Grant No. 081048611), China. W.C.H.C. is thankful for the support by the University Development Fund (UDF) and the seed funding of the University of Hong Kong.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorJin, L
 
dc.contributor.authorWang, J
 
dc.contributor.authorJia, S
 
dc.contributor.authorJiang, Q
 
dc.contributor.authorYan, X
 
dc.contributor.authorLu, P
 
dc.contributor.authorCai, Y
 
dc.contributor.authorDeng, L
 
dc.contributor.authorChoy, WCH
 
dc.date.accessioned2010-09-06T06:53:55Z
 
dc.date.available2010-09-06T06:53:55Z
 
dc.date.issued2010
 
dc.description.abstractZnSe zinc blende-wurtzite (ZB-WZ) heterocrystalline junctions were successfully fabricated via pressure variation during the thermal evaporation process and characterized using electron microscopy techniques. Two types of ZB-WZ junction configurations were observed, and the orientation relationships, denoted as [111̄] ZB //[0001]WZ (type I) and ±[111] ZB//[0001] WZ(type II), respectively, were determined in detail by systematic parallel beam selected area electron diffraction combined with stereographic projections. The relatively weak polarities on both sides of such junctions were also detected using convergent beam electron diffraction combined with simulation. Different from the ideal models suggested by the theoretical studies on the (111) ZB-(0001) WZinterface of ZnSe (even other II-VI semiconductors), the present results indicate the existence of the polarity reversal across the junctions, which may result in charge accumulations around the interfaces. Therefore, it offers an interesting real system for theoretical investigation on such polytypic interface and also an appropriate experimental platform for further electrical transport measurement across these junctions. Copyright © 2010 American Chemical Society.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationJournal Of Physical Chemistry C, 2010, v. 114 n. 3, p. 1411-1415 [How to Cite?]
DOI: http://dx.doi.org/10.1021/jp909182e
 
dc.identifier.doihttp://dx.doi.org/10.1021/jp909182e
 
dc.identifier.epage1415
 
dc.identifier.hkuros169622
 
dc.identifier.isiWOS:000273672500003
Funding AgencyGrant Number
Program for New Century Excellent Talents in UniversityNCET-07-0640
Research Fund for the Doctoral Program of Higher Education of China20090141110059
National Fund for Talent Training in Basic ScienceJ0830310
National University Students Training in Scientific Research Program of MOE081048611
University Development Fund (UDF)
University of Hong Kong
Funding Information:

This work was financially supported by the Program for New Century Excellent Talents in University (NCET-07-0640), Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090141110059), National Fund for Talent Training in Basic Science (Grant No. J0830310), and National University Students Training in Scientific Research Program of MOE (Grant No. 081048611), China. W.C.H.C. is thankful for the support by the University Development Fund (UDF) and the seed funding of the University of Hong Kong.

 
dc.identifier.issn1932-7447
2013 Impact Factor: 4.835
 
dc.identifier.issue3
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-77249086763
 
dc.identifier.spage1411
 
dc.identifier.urihttp://hdl.handle.net/10722/73700
 
dc.identifier.volume114
 
dc.languageeng
 
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Physical Chemistry C
 
dc.relation.referencesReferences in Scopus
 
dc.subjectCharge accumulation
 
dc.subjectConvergent-beam electron diffraction
 
dc.subjectElectrical transport measurements
 
dc.subjectExperimental platform
 
dc.subjectIdeal model
 
dc.titleZnSe heterocrystalline junctions based on zinc blende-wurtzite polytypism
 
dc.typeArticle
 
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<contributor.author>Lu, P</contributor.author>
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<contributor.author>Deng, L</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. Wuhan University