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Conference Paper: Enhanced areal efficiency from 370 nm AlGaN micro-ring light emitting diodes

TitleEnhanced areal efficiency from 370 nm AlGaN micro-ring light emitting diodes
Authors
Issue Date2005
PublisherWiley - V C H Verlag GmbH & Co KGaA.
Citation
Physica Status Solidi C: Conferences, 2005, v. 2 n. 7, p. 2854-2857 How to Cite?
AbstractThe electrical and optical characteristics of a 370 nm AlGaN light-emitting diode device based on a microring-array geometry are presented. By structuring the light emission area into an interconnected array of micro-scale rings, the directed light extraction efficiency is enhanced, and current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/73633
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorDawson, MDen_HK
dc.date.accessioned2010-09-06T06:53:16Z-
dc.date.available2010-09-06T06:53:16Z-
dc.date.issued2005en_HK
dc.identifier.citationPhysica Status Solidi C: Conferences, 2005, v. 2 n. 7, p. 2854-2857en_HK
dc.identifier.issn1610-1634en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73633-
dc.description.abstractThe electrical and optical characteristics of a 370 nm AlGaN light-emitting diode device based on a microring-array geometry are presented. By structuring the light emission area into an interconnected array of micro-scale rings, the directed light extraction efficiency is enhanced, and current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA.en_HK
dc.relation.ispartofPhysica Status Solidi C: Conferencesen_HK
dc.titleEnhanced areal efficiency from 370 nm AlGaN micro-ring light emitting diodesen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1610-1634&volume=2&spage=2854&epage=&date=2005&atitle=Enhanced+areal+efficiency+from+370+nm+AlGaN+micro-ring+light+emitting+diodesen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200461339en_HK
dc.identifier.scopuseid_2-s2.0-27344433131en_HK
dc.identifier.hkuros102791en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27344433131&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume2en_HK
dc.identifier.issue7en_HK
dc.identifier.spage2854en_HK
dc.identifier.epage2857en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK

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