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Article: Mechanisms of gate-induced drain leakage in n-MOSFET's

TitleMechanisms of gate-induced drain leakage in n-MOSFET's
Authors
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 1998, v. 38, p. 1425-1431 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/73622
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorHuang, Len_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2010-09-06T06:53:10Z-
dc.date.available2010-09-06T06:53:10Z-
dc.date.issued1998en_HK
dc.identifier.citationMicroelectronics Reliability, 1998, v. 38, p. 1425-1431en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73622-
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleMechanisms of gate-induced drain leakage in n-MOSFET'sen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=38&spage=1425&epage=1431&date=1998&atitle=Mechanisms+of+gate-induced+drain+leakage+in+n-MOSFET%27sen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.hkuros44770en_HK

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