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Conference Paper: Sub-micron InGaN ring structures for high-efficiency LEDs

TitleSub-micron InGaN ring structures for high-efficiency LEDs
Authors
Choi, HWEdwards, PRLiu, CJeon, CWMartin, RWWatson, IMDawson, MDTripathy, SChua, SJ
Issue Date2004
PublisherWiley - V C H Verlag GmbH & Co KGaA.
Citation
Physica Status Solidi C: Conferences, 2004, v. 1 n. 2, p. 202-205 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.200303910
AbstractA novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 μm and a wall width of 500 nm. A 1 cm -1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/73593
ISSN
1610-1634
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorEdwards, PRen_HK
dc.contributor.authorLiu, Cen_HK
dc.contributor.authorJeon, CWen_HK
dc.contributor.authorMartin, RWen_HK
dc.contributor.authorWatson, IMen_HK
dc.contributor.authorDawson, MDen_HK
dc.contributor.authorTripathy, Sen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2010-09-06T06:52:52Z-
dc.date.available2010-09-06T06:52:52Z-
dc.date.issued2004en_HK
dc.identifier.citationPhysica Status Solidi C: Conferences, 2004, v. 1 n. 2, p. 202-205en_HK
dc.identifier.issn1610-1634en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73593-
dc.description.abstractA novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 μm and a wall width of 500 nm. A 1 cm -1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA.en_HK
dc.relation.ispartofPhysica Status Solidi C: Conferencesen_HK
dc.titleSub-micron InGaN ring structures for high-efficiency LEDsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1610-1634&volume=&spage=&epage=&date=2004&atitle=Sub-micron+InGaN+Ring+Structures+for+High-efficiency+LEDsen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200303910en_HK
dc.identifier.scopuseid_2-s2.0-2342628543en_HK
dc.identifier.hkuros109870en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2342628543&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume1en_HK
dc.identifier.issue2en_HK
dc.identifier.spage202en_HK
dc.identifier.epage205en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridEdwards, PR=7401881875en_HK
dc.identifier.scopusauthoridLiu, C=36064477300en_HK
dc.identifier.scopusauthoridJeon, CW=7006894315en_HK
dc.identifier.scopusauthoridMartin, RW=9742683000en_HK
dc.identifier.scopusauthoridWatson, IM=24482692400en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK
dc.identifier.scopusauthoridTripathy, S=8698106400en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK
dc.identifier.issnl1610-1634-

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