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Article: The Optical Dielectric Function: Excitonic Effects at E0 Critical Point

TitleThe Optical Dielectric Function: Excitonic Effects at E0 Critical Point
Authors
KeywordsDielectric function
GaN
III-V semiconductors
Index of refraction
Optical constants
Issue Date2001
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jpsj/index.htm
Citation
Journal Of The Physical Society Of Japan, 2001, v. 70 n. 7, p. 2164-2167 How to Cite?
AbstractIn this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. The proposed analytical model takes into account accurately the excitonic effects, while it satisfies the requirements that, the imaginary part of the dielectric function is an odd function of energy, and the real part of the dielectric function is an even function. We show that accurate introduction of broadening leads to equations for the dielectric function containing only elementary functions, with terms dependent on the exciton order m describing discrete exciton states. The proposed model describes well the experimental data for the absorption edge of GaN.
Persistent Identifierhttp://hdl.handle.net/10722/73501
ISSN
2015 Impact Factor: 1.559
2015 SCImago Journal Rankings: 0.720
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2010-09-06T06:51:56Z-
dc.date.available2010-09-06T06:51:56Z-
dc.date.issued2001en_HK
dc.identifier.citationJournal Of The Physical Society Of Japan, 2001, v. 70 n. 7, p. 2164-2167en_HK
dc.identifier.issn0031-9015en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73501-
dc.description.abstractIn this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. The proposed analytical model takes into account accurately the excitonic effects, while it satisfies the requirements that, the imaginary part of the dielectric function is an odd function of energy, and the real part of the dielectric function is an even function. We show that accurate introduction of broadening leads to equations for the dielectric function containing only elementary functions, with terms dependent on the exciton order m describing discrete exciton states. The proposed model describes well the experimental data for the absorption edge of GaN.en_HK
dc.languageengen_HK
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jpsj/index.htmen_HK
dc.relation.ispartofJournal of the Physical Society of Japanen_HK
dc.subjectDielectric functionen_HK
dc.subjectGaNen_HK
dc.subjectIII-V semiconductorsen_HK
dc.subjectIndex of refractionen_HK
dc.subjectOptical constantsen_HK
dc.titleThe Optical Dielectric Function: Excitonic Effects at E0 Critical Pointen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9015&volume=70&issue=7&spage=2164&epage=2167&date=2001&atitle=The+optical+dielectric+function:+excitonic+effects+at+E0+critical+pointen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1143/JPSJ.70.2164en_HK
dc.identifier.scopuseid_2-s2.0-0035613190en_HK
dc.identifier.hkuros72255en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035613190&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume70en_HK
dc.identifier.issue7en_HK
dc.identifier.spage2164en_HK
dc.identifier.epage2167en_HK
dc.identifier.isiWOS:000170077600050-
dc.publisher.placeJapanen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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