File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1088/0022-3727/34/4/309
- Scopus: eid_2-s2.0-0035249371
- WOS: WOS:000167349700009
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Studies of thermal stability of trapped charges associated with OSL from quartz
Title | Studies of thermal stability of trapped charges associated with OSL from quartz |
---|---|
Authors | |
Issue Date | 2001 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd |
Citation | Journal Of Physics D: Applied Physics, 2001, v. 34 n. 4, p. 493-498 How to Cite? |
Abstract | The optically stimulated luminescence (OSL) from quartz relates to not only the trapped electrons associated with the OSL signals, but also the luminescence centres involved. In this paper we report pulse annealing and isothermal annealing experiments on a 17 ka old sedimentary quartz to study thermal stability of electrons in OSL traps and the trapped holes associated with the non-luminescence centres (R centres). The lifetimes obtained are in the order of magnitude of 109 and 104 years at 20°C, for electrons in the stable OSL traps and the holes associated with sensitivity change, respectively. The results indicate that the OSL sensitivity change is dominated by the transferring of holes from one type of R centre to luminescence centres (L centres), and is different from the 110°C TL peak, which appears to involve more than one type of R hole centre. |
Persistent Identifier | http://hdl.handle.net/10722/72656 |
ISSN | 2023 Impact Factor: 3.1 2023 SCImago Journal Rankings: 0.681 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, SH | en_HK |
dc.contributor.author | Chen, G | en_HK |
dc.date.accessioned | 2010-09-06T06:43:52Z | - |
dc.date.available | 2010-09-06T06:43:52Z | - |
dc.date.issued | 2001 | en_HK |
dc.identifier.citation | Journal Of Physics D: Applied Physics, 2001, v. 34 n. 4, p. 493-498 | en_HK |
dc.identifier.issn | 0022-3727 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/72656 | - |
dc.description.abstract | The optically stimulated luminescence (OSL) from quartz relates to not only the trapped electrons associated with the OSL signals, but also the luminescence centres involved. In this paper we report pulse annealing and isothermal annealing experiments on a 17 ka old sedimentary quartz to study thermal stability of electrons in OSL traps and the trapped holes associated with the non-luminescence centres (R centres). The lifetimes obtained are in the order of magnitude of 109 and 104 years at 20°C, for electrons in the stable OSL traps and the holes associated with sensitivity change, respectively. The results indicate that the OSL sensitivity change is dominated by the transferring of holes from one type of R centre to luminescence centres (L centres), and is different from the 110°C TL peak, which appears to involve more than one type of R hole centre. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd | en_HK |
dc.relation.ispartof | Journal of Physics D: Applied Physics | en_HK |
dc.title | Studies of thermal stability of trapped charges associated with OSL from quartz | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-3727&volume=34&spage=493&epage=498&date=2001&atitle=Studies+of+thermal+stability+of+trapped+charges+associated+with+OSL+from+quartz. | en_HK |
dc.identifier.email | Li, SH:shli@hku.hk | en_HK |
dc.identifier.authority | Li, SH=rp00740 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/0022-3727/34/4/309 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0035249371 | en_HK |
dc.identifier.hkuros | 63422 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0035249371&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 34 | en_HK |
dc.identifier.issue | 4 | en_HK |
dc.identifier.spage | 493 | en_HK |
dc.identifier.epage | 498 | en_HK |
dc.identifier.isi | WOS:000167349700009 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Li, SH=24438103700 | en_HK |
dc.identifier.scopusauthorid | Chen, G=7407505500 | en_HK |
dc.identifier.issnl | 0022-3727 | - |