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Article: Defect emissions in ZnO nanostructures
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TitleDefect emissions in ZnO nanostructures
 
AuthorsDjurišić, AB1
Leung, YH1
Tam, KH1
Hsu, YF1
Ding, L3
Ge, WK3
Zhong, YC3
Wong, KS3
Chan, WK1
Tam, HL2
Cheah, KW2
Kwok, WM1
Phillips, DL1
 
Issue Date2007
 
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
 
CitationNanotechnology, 2007, v. 18 n. 9, p. 095702 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0957-4484/18/9/095702
 
AbstractDefects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions. © IOP Publishing Ltd.
 
ISSN0957-4484
2013 Impact Factor: 3.672
 
DOIhttp://dx.doi.org/10.1088/0957-4484/18/9/095702
 
ISI Accession Number IDWOS:000245219800018
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorLeung, YH
 
dc.contributor.authorTam, KH
 
dc.contributor.authorHsu, YF
 
dc.contributor.authorDing, L
 
dc.contributor.authorGe, WK
 
dc.contributor.authorZhong, YC
 
dc.contributor.authorWong, KS
 
dc.contributor.authorChan, WK
 
dc.contributor.authorTam, HL
 
dc.contributor.authorCheah, KW
 
dc.contributor.authorKwok, WM
 
dc.contributor.authorPhillips, DL
 
dc.date.accessioned2010-09-06T06:22:22Z
 
dc.date.available2010-09-06T06:22:22Z
 
dc.date.issued2007
 
dc.description.abstractDefects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions. © IOP Publishing Ltd.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationNanotechnology, 2007, v. 18 n. 9, p. 095702 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0957-4484/18/9/095702
 
dc.identifier.citeulike2057887
 
dc.identifier.doihttp://dx.doi.org/10.1088/0957-4484/18/9/095702
 
dc.identifier.hkuros125763
 
dc.identifier.isiWOS:000245219800018
 
dc.identifier.issn0957-4484
2013 Impact Factor: 3.672
 
dc.identifier.issue9, p. 095702
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-33947510248
 
dc.identifier.urihttp://hdl.handle.net/10722/70385
 
dc.identifier.volume18
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofNanotechnology
 
dc.relation.referencesReferences in Scopus
 
dc.titleDefect emissions in ZnO nanostructures
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong University of Science and Technology