Article: The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs
File Download
(May Require Subscription)
- No File Attached
(May Require Subscription)
- Publisher Website: 10.1149/1.3282743
- Scopus: eid_2-s2.0-76349103077
- Find via
Supplementary
-
Citations:
-
Appears in Collections:
| Title | The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Authors | Chen, XY1 Ng, AMC1 Fang, F1 Djurišić, AB1 Chan, WK1 Tam, HL2 Cheah, KW2 Fong, PWK3 Lui, HF3 Surya, C3 | ||||||||
| Keywords | Current voltage curve Photoluminescence spectrum Gallium nitride Light emission Zinc oxide | ||||||||
| Issue Date | 2010 | ||||||||
| Publisher | Electrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES | ||||||||
| Citation | Journal Of The Electrochemical Society, 2010, v. 157 n. 3, p. H308-H311 [How to Cite?] DOI: http://dx.doi.org/10.1149/1.3282743 | ||||||||
| Abstract | We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society. | ||||||||
| ISSN | 0013-4651 2011 Impact Factor: 2.59 2011 SCImago Journal Rankings: 0.232 | ||||||||
| DOI | http://dx.doi.org/10.1149/1.3282743 | ||||||||
| ISI Accession Number ID | WOS:000274321900082
Funding Information: The financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and Outstanding Young Researcher Award (administrated by The University of Hong Kong) and Innovation & Technology Fund grant no. ITS/129/08 is acknowledged. | ||||||||
| References | References in Scopus | ||||||||
| Grants | Light Emitting Diodes Fabricated by Electrochemical Methods |
| dc.contributor.author | Chen, XY | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| dc.contributor.author | Ng, AMC | ||||||||
| dc.contributor.author | Fang, F | ||||||||
| dc.contributor.author | Djurišić, AB | ||||||||
| dc.contributor.author | Chan, WK | ||||||||
| dc.contributor.author | Tam, HL | ||||||||
| dc.contributor.author | Cheah, KW | ||||||||
| dc.contributor.author | Fong, PWK | ||||||||
| dc.contributor.author | Lui, HF | ||||||||
| dc.contributor.author | Surya, C | ||||||||
| dc.date.accessioned | 2010-09-06T06:19:07Z | ||||||||
| dc.date.available | 2010-09-06T06:19:07Z | ||||||||
| dc.date.issued | 2010 | ||||||||
| dc.description.abstract | We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society. | ||||||||
| dc.description.grant | Light Emitting Diodes Fabricated by Electrochemical Methods | ||||||||
| dc.description.grantcode | 100446 | ||||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||||
| dc.identifier.citation | Journal Of The Electrochemical Society, 2010, v. 157 n. 3, p. H308-H311 [How to Cite?] DOI: http://dx.doi.org/10.1149/1.3282743 | ||||||||
| dc.identifier.doi | http://dx.doi.org/10.1149/1.3282743 | ||||||||
| dc.identifier.epage | H311 | ||||||||
| dc.identifier.hkuros | 168663 | ||||||||
| dc.identifier.isi | WOS:000274321900082
Funding Information: The financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and Outstanding Young Researcher Award (administrated by The University of Hong Kong) and Innovation & Technology Fund grant no. ITS/129/08 is acknowledged. | ||||||||
| dc.identifier.issn | 0013-4651 2011 Impact Factor: 2.59 2011 SCImago Journal Rankings: 0.232 | ||||||||
| dc.identifier.issue | 3 | ||||||||
| dc.identifier.openurl | | ||||||||
| dc.identifier.scopus | eid_2-s2.0-76349103077 | ||||||||
| dc.identifier.spage | H308 | ||||||||
| dc.identifier.uri | http://hdl.handle.net/10722/70037 | ||||||||
| dc.identifier.volume | 157 | ||||||||
| dc.language | eng | ||||||||
| dc.publisher | Electrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES | ||||||||
| dc.publisher.place | United States | ||||||||
| dc.relation.ispartof | Journal of the Electrochemical Society | ||||||||
| dc.relation.references | References in Scopus | ||||||||
| dc.rights | Journal of the Electrochemical Society. Copyright © Electrochemical Society, Inc. | ||||||||
| dc.subject | Current voltage curve | ||||||||
| dc.subject | Photoluminescence spectrum | ||||||||
| dc.subject | Gallium nitride | ||||||||
| dc.subject | Light emission | ||||||||
| dc.subject | Zinc oxide | ||||||||
| dc.title | The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs | ||||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Hong Kong Baptist University
- Hong Kong Polytechnic University