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Article: The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs
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TitleThe influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs
 
AuthorsChen, XY1
Ng, AMC1
Fang, F1
Djurišić, AB1
Chan, WK1
Tam, HL2
Cheah, KW2
Fong, PWK3
Lui, HF3
Surya, C3
 
KeywordsCurrent voltage curve
Photoluminescence spectrum
Gallium nitride
Light emission
Zinc oxide
 
Issue Date2010
 
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
 
CitationJournal Of The Electrochemical Society, 2010, v. 157 n. 3, p. H308-H311 [How to Cite?]
DOI: http://dx.doi.org/10.1149/1.3282743
 
AbstractWe have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society.
 
ISSN0013-4651
2013 Impact Factor: 2.859
2013 SCImago Journal Rankings: 1.243
 
DOIhttp://dx.doi.org/10.1149/1.3282743
 
ISI Accession Number IDWOS:000274321900082
Funding AgencyGrant Number
Strategic Research Theme, University Development Fund
Seed Funding Grant and Outstanding Young Researcher Award
Innovation & Technology FundITS/129/08
Funding Information:

The financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and Outstanding Young Researcher Award (administrated by The University of Hong Kong) and Innovation & Technology Fund grant no. ITS/129/08 is acknowledged.

 
ReferencesReferences in Scopus
 
GrantsLight Emitting Diodes Fabricated by Electrochemical Methods
 
DC FieldValue
dc.contributor.authorChen, XY
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorFang, F
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorChan, WK
 
dc.contributor.authorTam, HL
 
dc.contributor.authorCheah, KW
 
dc.contributor.authorFong, PWK
 
dc.contributor.authorLui, HF
 
dc.contributor.authorSurya, C
 
dc.date.accessioned2010-09-06T06:19:07Z
 
dc.date.available2010-09-06T06:19:07Z
 
dc.date.issued2010
 
dc.description.abstractWe have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationJournal Of The Electrochemical Society, 2010, v. 157 n. 3, p. H308-H311 [How to Cite?]
DOI: http://dx.doi.org/10.1149/1.3282743
 
dc.identifier.doihttp://dx.doi.org/10.1149/1.3282743
 
dc.identifier.epageH311
 
dc.identifier.hkuros168663
 
dc.identifier.isiWOS:000274321900082
Funding AgencyGrant Number
Strategic Research Theme, University Development Fund
Seed Funding Grant and Outstanding Young Researcher Award
Innovation & Technology FundITS/129/08
Funding Information:

The financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and Outstanding Young Researcher Award (administrated by The University of Hong Kong) and Innovation & Technology Fund grant no. ITS/129/08 is acknowledged.

 
dc.identifier.issn0013-4651
2013 Impact Factor: 2.859
2013 SCImago Journal Rankings: 1.243
 
dc.identifier.issue3
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-76349103077
 
dc.identifier.spageH308
 
dc.identifier.urihttp://hdl.handle.net/10722/70037
 
dc.identifier.volume157
 
dc.languageeng
 
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of the Electrochemical Society
 
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of the Electrochemical Society. Copyright © Electrochemical Society, Inc.
 
dc.subjectCurrent voltage curve
 
dc.subjectPhotoluminescence spectrum
 
dc.subjectGallium nitride
 
dc.subjectLight emission
 
dc.subjectZinc oxide
 
dc.titleThe influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs
 
dc.typeArticle
 
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<contributor.author>Tam, HL</contributor.author>
<contributor.author>Cheah, KW</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University