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Article: Undoped p-type ZnO nanorods synthesized by a hydrothermal method
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TitleUndoped p-type ZnO nanorods synthesized by a hydrothermal method
 
AuthorsHsu, YF1
Xi, YY1
Tam, KH1
Djurišić, AB1
Luo, J1
Ling, CC1
Cheung, CK1
Ng, AMC1
Chan, WK1
Deng, X1
Beling, CD1
Fung, S1
Cheah, KW2
Fong, PWK3
Surya, CC3
 
Issue Date2008
 
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm
 
CitationAdvanced Functional Materials, 2008, v. 18 n. 7, p. 1020-1030 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adfm.200701083
 
AbstractZinc oxide is a very promising material for short-wavelength light-emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p-type doping and control over native defects introduced during or after material growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90 °C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth. The differences in the conductivity type can be attributed to dependency of native defect concentrations and hydrogen incorporation on the seed layer preparation method. Room temperature electroluminescence has been demonstrated from homojunction and heterojunction light emitting diodes containing p-ZnO nanorods. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.
 
ISSN1616-301X
2013 Impact Factor: 10.439
2013 SCImago Journal Rankings: 4.682
 
DOIhttp://dx.doi.org/10.1002/adfm.200701083
 
ISI Accession Number IDWOS:000255351500005
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorHsu, YF
 
dc.contributor.authorXi, YY
 
dc.contributor.authorTam, KH
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorLuo, J
 
dc.contributor.authorLing, CC
 
dc.contributor.authorCheung, CK
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorChan, WK
 
dc.contributor.authorDeng, X
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, S
 
dc.contributor.authorCheah, KW
 
dc.contributor.authorFong, PWK
 
dc.contributor.authorSurya, CC
 
dc.date.accessioned2010-09-06T06:17:45Z
 
dc.date.available2010-09-06T06:17:45Z
 
dc.date.issued2008
 
dc.description.abstractZinc oxide is a very promising material for short-wavelength light-emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p-type doping and control over native defects introduced during or after material growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90 °C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth. The differences in the conductivity type can be attributed to dependency of native defect concentrations and hydrogen incorporation on the seed layer preparation method. Room temperature electroluminescence has been demonstrated from homojunction and heterojunction light emitting diodes containing p-ZnO nanorods. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationAdvanced Functional Materials, 2008, v. 18 n. 7, p. 1020-1030 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adfm.200701083
 
dc.identifier.doihttp://dx.doi.org/10.1002/adfm.200701083
 
dc.identifier.eissn1616-3028
 
dc.identifier.epage1030
 
dc.identifier.hkuros141547
 
dc.identifier.isiWOS:000255351500005
 
dc.identifier.issn1616-301X
2013 Impact Factor: 10.439
2013 SCImago Journal Rankings: 4.682
 
dc.identifier.issue7
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-42549132654
 
dc.identifier.spage1020
 
dc.identifier.urihttp://hdl.handle.net/10722/69887
 
dc.identifier.volume18
 
dc.languageeng
 
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm
 
dc.publisher.placeGermany
 
dc.relation.ispartofAdvanced Functional Materials
 
dc.relation.referencesReferences in Scopus
 
dc.titleUndoped p-type ZnO nanorods synthesized by a hydrothermal method
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University