Article: Undoped p-type ZnO nanorods synthesized by a hydrothermal method

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TitleUndoped p-type ZnO nanorods synthesized by a hydrothermal method
AuthorsHsu, YF1
Xi, YY1
Tam, KH1
Djurišić, AB1
Luo, J1
Ling, CC1
Cheung, CK1
Ng, AMC1
Chan, WK1
Deng, X1
Beling, CD1
Fung, S1
Cheah, KW2
Fong, PWK3
Surya, CC3
Issue Date2008
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm
CitationAdvanced Functional Materials, 2008, v. 18 n. 7, p. 1020-1030 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adfm.200701083
AbstractZinc oxide is a very promising material for short-wavelength light-emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p-type doping and control over native defects introduced during or after material growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90 °C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth. The differences in the conductivity type can be attributed to dependency of native defect concentrations and hydrogen incorporation on the seed layer preparation method. Room temperature electroluminescence has been demonstrated from homojunction and heterojunction light emitting diodes containing p-ZnO nanorods. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.
ISSN1616-301X
2011 Impact Factor: 10.179
2011 SCImago Journal Rankings: 1.021
DOIhttp://dx.doi.org/10.1002/adfm.200701083
ISI Accession Number IDWOS:000255351500005
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorHsu, YF
dc.contributor.authorXi, YY
dc.contributor.authorTam, KH
dc.contributor.authorDjurišić, AB
dc.contributor.authorLuo, J
dc.contributor.authorLing, CC
dc.contributor.authorCheung, CK
dc.contributor.authorNg, AMC
dc.contributor.authorChan, WK
dc.contributor.authorDeng, X
dc.contributor.authorBeling, CD
dc.contributor.authorFung, S
dc.contributor.authorCheah, KW
dc.contributor.authorFong, PWK
dc.contributor.authorSurya, CC
dc.date.accessioned2010-09-06T06:17:45Z
dc.date.available2010-09-06T06:17:45Z
dc.date.issued2008
dc.description.abstractZinc oxide is a very promising material for short-wavelength light-emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p-type doping and control over native defects introduced during or after material growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90 °C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth. The differences in the conductivity type can be attributed to dependency of native defect concentrations and hydrogen incorporation on the seed layer preparation method. Room temperature electroluminescence has been demonstrated from homojunction and heterojunction light emitting diodes containing p-ZnO nanorods. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.
dc.description.naturelink_to_OA_fulltext
dc.identifier.citationAdvanced Functional Materials, 2008, v. 18 n. 7, p. 1020-1030 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adfm.200701083
dc.identifier.doihttp://dx.doi.org/10.1002/adfm.200701083
dc.identifier.epage1030
dc.identifier.hkuros141547
dc.identifier.isiWOS:000255351500005
dc.identifier.issn1616-301X
2011 Impact Factor: 10.179
2011 SCImago Journal Rankings: 1.021
dc.identifier.issue7
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-42549132654
dc.identifier.spage1020
dc.identifier.urihttp://hdl.handle.net/10722/69887
dc.identifier.volume18
dc.languageeng
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm
dc.publisher.placeGermany
dc.relation.ispartofAdvanced Functional Materials
dc.relation.referencesReferences in Scopus
dc.titleUndoped p-type ZnO nanorods synthesized by a hydrothermal method
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University