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Article: Undoped p-type ZnO nanorods synthesized by a hydrothermal method

TitleUndoped p-type ZnO nanorods synthesized by a hydrothermal method
Authors
Issue Date2008
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm
Citation
Advanced Functional Materials, 2008, v. 18 n. 7, p. 1020-1030 How to Cite?
AbstractZinc oxide is a very promising material for short-wavelength light-emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p-type doping and control over native defects introduced during or after material growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90 °C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth. The differences in the conductivity type can be attributed to dependency of native defect concentrations and hydrogen incorporation on the seed layer preparation method. Room temperature electroluminescence has been demonstrated from homojunction and heterojunction light emitting diodes containing p-ZnO nanorods. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.
Persistent Identifierhttp://hdl.handle.net/10722/69887
ISSN
2014 Impact Factor: 11.805
2014 SCImago Journal Rankings: 4.187
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorXi, YYen_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLuo, Jen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorDeng, Xen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorFong, PWKen_HK
dc.contributor.authorSurya, CCen_HK
dc.date.accessioned2010-09-06T06:17:45Z-
dc.date.available2010-09-06T06:17:45Z-
dc.date.issued2008en_HK
dc.identifier.citationAdvanced Functional Materials, 2008, v. 18 n. 7, p. 1020-1030en_HK
dc.identifier.issn1616-301Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/69887-
dc.description.abstractZinc oxide is a very promising material for short-wavelength light-emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p-type doping and control over native defects introduced during or after material growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90 °C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth. The differences in the conductivity type can be attributed to dependency of native defect concentrations and hydrogen incorporation on the seed layer preparation method. Room temperature electroluminescence has been demonstrated from homojunction and heterojunction light emitting diodes containing p-ZnO nanorods. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afmen_HK
dc.relation.ispartofAdvanced Functional Materialsen_HK
dc.titleUndoped p-type ZnO nanorods synthesized by a hydrothermal methoden_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1616-301X&volume=18&spage=1020&epage=1030&date=2008&atitle=Undoped+p-type+ZnO+nanorods+synthesized+by+a+hydrothermal+methoden_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adfm.200701083en_HK
dc.identifier.scopuseid_2-s2.0-42549132654en_HK
dc.identifier.hkuros141547en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-42549132654&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume18en_HK
dc.identifier.issue7en_HK
dc.identifier.spage1020en_HK
dc.identifier.epage1030en_HK
dc.identifier.eissn1616-3028-
dc.identifier.isiWOS:000255351500005-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridHsu, YF=35078582800en_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLuo, J=24081000400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridDeng, X=36986048500en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridFong, PWK=24080393500en_HK
dc.identifier.scopusauthoridSurya, CC=7003939256en_HK

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