Article: GaN/ZnO nanorod light emitting diodes with different emission spectra

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TitleGaN/ZnO nanorod light emitting diodes with different emission spectra
AuthorsNg, AMC1
Xi, YY1
Hsu, YF1
Djuriić, AB1
Chan, WK1
Gwo, S3
Tam, HL2
Cheah, KW2
Fong, PWK4
Lui, HF4
Surya, C4
KeywordsAnnealing condition
Backward diodes
Emission spectrums
Epiwafers
GaN epitaxial films
Issue Date2009
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
CitationNanotechnology, 2009, v. 20 n. 44 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0957-4484/20/44/445201
AbstractLight emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods. © 2009 IOP Publishing Ltd.
ISSN0957-4484
2011 Impact Factor: 3.979
2011 SCImago Journal Rankings: 0.266
DOIhttp://dx.doi.org/10.1088/0957-4484/20/44/445201
ReferencesReferences in Scopus
GrantsLight Emitting Diodes Fabricated by Electrochemical Methods
DC Field
Value
dc.contributor.authorNg, AMC
dc.contributor.authorXi, YY
dc.contributor.authorHsu, YF
dc.contributor.authorDjuriić, AB
dc.contributor.authorChan, WK
dc.contributor.authorGwo, S
dc.contributor.authorTam, HL
dc.contributor.authorCheah, KW
dc.contributor.authorFong, PWK
dc.contributor.authorLui, HF
dc.contributor.authorSurya, C
dc.date.accessioned2010-09-06T06:17:23Z
dc.date.available2010-09-06T06:17:23Z
dc.date.issued2009
dc.description.abstractLight emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods. © 2009 IOP Publishing Ltd.
dc.description.grantLight Emitting Diodes Fabricated by Electrochemical Methods
dc.description.grantcode100446
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationNanotechnology, 2009, v. 20 n. 44 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0957-4484/20/44/445201
dc.identifier.doihttp://dx.doi.org/10.1088/0957-4484/20/44/445201
dc.identifier.hkuros167921
dc.identifier.isiWOS:000270562900003
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding Grant
Outstanding Young Researcher Award ( administrated by The University of Hong Kong)
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award ( administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund grant ITS/129/08 is acknowledged.

dc.identifier.issn0957-4484
2011 Impact Factor: 3.979
2011 SCImago Journal Rankings: 0.266
dc.identifier.issue44
dc.identifier.openurl
dc.identifier.pmid19801783
dc.identifier.scopuseid_2-s2.0-70349690414
dc.identifier.urihttp://hdl.handle.net/10722/69848
dc.identifier.volume20
dc.languageeng
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
dc.publisher.placeUnited Kingdom
dc.relation.ispartofNanotechnology
dc.relation.referencesReferences in Scopus
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.
dc.subjectAnnealing condition
dc.subjectBackward diodes
dc.subjectEmission spectrums
dc.subjectEpiwafers
dc.subjectGaN epitaxial films
dc.titleGaN/ZnO nanorod light emitting diodes with different emission spectra
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. National Tsing Hua University
  4. Hong Kong Polytechnic University