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Article: GaN/ZnO nanorod light emitting diodes with different emission spectra
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TitleGaN/ZnO nanorod light emitting diodes with different emission spectra
 
AuthorsNg, AMC1
Xi, YY1
Hsu, YF1
Djuriić, AB1
Chan, WK1
Gwo, S4
Tam, HL2
Cheah, KW2
Fong, PWK3
Lui, HF3
Surya, C3
 
KeywordsAnnealing condition
Backward diodes
Emission spectrums
Epiwafers
GaN epitaxial films
 
Issue Date2009
 
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
 
CitationNanotechnology, 2009, v. 20 n. 44 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0957-4484/20/44/445201
 
AbstractLight emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods. © 2009 IOP Publishing Ltd.
 
ISSN0957-4484
2013 Impact Factor: 3.672
 
DOIhttp://dx.doi.org/10.1088/0957-4484/20/44/445201
 
ISI Accession Number IDWOS:000270562900003
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding Grant
Outstanding Young Researcher Award ( administrated by The University of Hong Kong)
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award ( administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund grant ITS/129/08 is acknowledged.

 
ReferencesReferences in Scopus
 
GrantsLight Emitting Diodes Fabricated by Electrochemical Methods
 
DC FieldValue
dc.contributor.authorNg, AMC
 
dc.contributor.authorXi, YY
 
dc.contributor.authorHsu, YF
 
dc.contributor.authorDjuriić, AB
 
dc.contributor.authorChan, WK
 
dc.contributor.authorGwo, S
 
dc.contributor.authorTam, HL
 
dc.contributor.authorCheah, KW
 
dc.contributor.authorFong, PWK
 
dc.contributor.authorLui, HF
 
dc.contributor.authorSurya, C
 
dc.date.accessioned2010-09-06T06:17:23Z
 
dc.date.available2010-09-06T06:17:23Z
 
dc.date.issued2009
 
dc.description.abstractLight emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods. © 2009 IOP Publishing Ltd.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationNanotechnology, 2009, v. 20 n. 44 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0957-4484/20/44/445201
 
dc.identifier.doihttp://dx.doi.org/10.1088/0957-4484/20/44/445201
 
dc.identifier.hkuros167921
 
dc.identifier.isiWOS:000270562900003
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding Grant
Outstanding Young Researcher Award ( administrated by The University of Hong Kong)
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award ( administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund grant ITS/129/08 is acknowledged.

 
dc.identifier.issn0957-4484
2013 Impact Factor: 3.672
 
dc.identifier.issue44
 
dc.identifier.openurl
 
dc.identifier.pmid19801783
 
dc.identifier.scopuseid_2-s2.0-70349690414
 
dc.identifier.urihttp://hdl.handle.net/10722/69848
 
dc.identifier.volume20
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofNanotechnology
 
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods
 
dc.relation.referencesReferences in Scopus
 
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.
 
dc.subjectAnnealing condition
 
dc.subjectBackward diodes
 
dc.subjectEmission spectrums
 
dc.subjectEpiwafers
 
dc.subjectGaN epitaxial films
 
dc.titleGaN/ZnO nanorod light emitting diodes with different emission spectra
 
dc.typeArticle
 
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<contributor.author>Gwo, S</contributor.author>
<contributor.author>Tam, HL</contributor.author>
<contributor.author>Cheah, KW</contributor.author>
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<description.abstract>Light emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods. &#169; 2009 IOP Publishing Ltd.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University
  4. National Tsing Hua University