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Article: Defects in ZnO nanorods prepared by a hydrothermal method

TitleDefects in ZnO nanorods prepared by a hydrothermal method
Authors
Issue Date2006
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/jpcbfk
Citation
Journal Of Physical Chemistry B, 2006, v. 110 n. 42, p. 20865-20871 How to Cite?
AbstractZnO nanorod arrays were fabricated using a hydrothermal method. The nanorods were studied by scanning electron microscopy, photoluminescence (PL), time-resolved PL, X-ray photoelectron spectroscopy, and positron annihilation spectroscopy before and after annealing in different environments and at different temperatures. Annealing atmosphere and temperature had significant effects on the PL spectrum, while in all cases the positron diffusion length and PL decay times were increased. We found that, while the defect emission can be significantly reduced by annealing at 200°C, the rods still have large defect concentrations as confirmed by their low positron diffusion length and short PL decay time constants. © 2006 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/69754
ISSN
2015 Impact Factor: 3.187
2015 SCImago Journal Rankings: 1.414
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTam, KHen_HK
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorLeung, YHen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorKwok, WMen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorPhillips, DLen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorGe, WKen_HK
dc.date.accessioned2010-09-06T06:16:32Z-
dc.date.available2010-09-06T06:16:32Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal Of Physical Chemistry B, 2006, v. 110 n. 42, p. 20865-20871en_HK
dc.identifier.issn1520-6106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/69754-
dc.description.abstractZnO nanorod arrays were fabricated using a hydrothermal method. The nanorods were studied by scanning electron microscopy, photoluminescence (PL), time-resolved PL, X-ray photoelectron spectroscopy, and positron annihilation spectroscopy before and after annealing in different environments and at different temperatures. Annealing atmosphere and temperature had significant effects on the PL spectrum, while in all cases the positron diffusion length and PL decay times were increased. We found that, while the defect emission can be significantly reduced by annealing at 200°C, the rods still have large defect concentrations as confirmed by their low positron diffusion length and short PL decay time constants. © 2006 American Chemical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/jpcbfken_HK
dc.relation.ispartofJournal of Physical Chemistry Ben_HK
dc.titleDefects in ZnO nanorods prepared by a hydrothermal methoden_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1520-6106&volume=110&spage=20865&epage=20871&date=2006&atitle=Defects+in+ZnO+nanorods+prepared+by+a+hydrothermal+methoden_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.emailPhillips, DL: phillips@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.identifier.authorityPhillips, DL=rp00770en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp063239wen_HK
dc.identifier.scopuseid_2-s2.0-33751296959en_HK
dc.identifier.hkuros124813en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33751296959&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue42en_HK
dc.identifier.spage20865en_HK
dc.identifier.epage20871en_HK
dc.identifier.isiWOS:000241381600027-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridLeung, YH=7201463866en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridKwok, WM=7103129332en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridPhillips, DL=7404519365en_HK
dc.identifier.scopusauthoridDing, L=10639111500en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK

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