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Article: GaN nanowires-influence of the starting material on nanowire growth

TitleGaN nanowires-influence of the starting material on nanowire growth
Authors
KeywordsGaN
Mn-doped
Nanowires
Issue Date2007
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2007, v. 516 n. 2-4, p. 238-242 How to Cite?
AbstractIn this work, GaN nanowires were fabricated on Si substrates coated with gold and nickel catalyst using a thermally assisted chemical vapor deposition method by evaporating mixture of Ga, GaN, MnO2 (only for Mn-doped GaN) and carbon (single wall carbon nanotubes (SWCNT) or graphite) at 1100 °C in ammonia gas flow. The fabricated nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and X-ray diffractometry (XRD). We investigated the influence of the source of carbon and substrate temperature on the morphology and composition of the nanowires. We found that nanowire composition is strongly dependent on the substrate temperature, with oxygen incorporation increasing with decreasing substrate temperature, and also on the composition of the source material. Growth mechanism and properties of obtained nanostructures are discussed. © 2007 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/69619
ISSN
2014 Impact Factor: 1.759
2014 SCImago Journal Rankings: 0.693
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorZhang, SLen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2010-09-06T06:15:19Z-
dc.date.available2010-09-06T06:15:19Z-
dc.date.issued2007en_HK
dc.identifier.citationThin Solid Films, 2007, v. 516 n. 2-4, p. 238-242en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/69619-
dc.description.abstractIn this work, GaN nanowires were fabricated on Si substrates coated with gold and nickel catalyst using a thermally assisted chemical vapor deposition method by evaporating mixture of Ga, GaN, MnO2 (only for Mn-doped GaN) and carbon (single wall carbon nanotubes (SWCNT) or graphite) at 1100 °C in ammonia gas flow. The fabricated nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and X-ray diffractometry (XRD). We investigated the influence of the source of carbon and substrate temperature on the morphology and composition of the nanowires. We found that nanowire composition is strongly dependent on the substrate temperature, with oxygen incorporation increasing with decreasing substrate temperature, and also on the composition of the source material. Growth mechanism and properties of obtained nanostructures are discussed. © 2007 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectGaNen_HK
dc.subjectMn-dopeden_HK
dc.subjectNanowiresen_HK
dc.titleGaN nanowires-influence of the starting material on nanowire growthen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=516&spage=238&epage=242&date=2007&atitle=GaN+nanowires--influence+of+the+starting+material+on+nanowire+growthen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2007.06.031en_HK
dc.identifier.scopuseid_2-s2.0-36049048583en_HK
dc.identifier.hkuros139148en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36049048583&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume516en_HK
dc.identifier.issue2-4en_HK
dc.identifier.spage238en_HK
dc.identifier.epage242en_HK
dc.identifier.isiWOS:000252037500026-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridZhang, SL=22982333400en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridChan, WK=8059126200en_HK

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