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Article: GaN nanowires-influence of the starting material on nanowire growth
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TitleGaN nanowires-influence of the starting material on nanowire growth
 
AuthorsDjurišić, AB1
Tam, KH1
Hsu, YF1
Zhang, SL1
Xie, MH1
Chan, WK1
 
KeywordsGaN
Mn-doped
Nanowires
 
Issue Date2007
 
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
 
CitationThin Solid Films, 2007, v. 516 n. 2-4, p. 238-242 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.tsf.2007.06.031
 
AbstractIn this work, GaN nanowires were fabricated on Si substrates coated with gold and nickel catalyst using a thermally assisted chemical vapor deposition method by evaporating mixture of Ga, GaN, MnO2 (only for Mn-doped GaN) and carbon (single wall carbon nanotubes (SWCNT) or graphite) at 1100 °C in ammonia gas flow. The fabricated nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and X-ray diffractometry (XRD). We investigated the influence of the source of carbon and substrate temperature on the morphology and composition of the nanowires. We found that nanowire composition is strongly dependent on the substrate temperature, with oxygen incorporation increasing with decreasing substrate temperature, and also on the composition of the source material. Growth mechanism and properties of obtained nanostructures are discussed. © 2007 Elsevier B.V. All rights reserved.
 
ISSN0040-6090
2013 Impact Factor: 1.867
2013 SCImago Journal Rankings: 0.884
 
DOIhttp://dx.doi.org/10.1016/j.tsf.2007.06.031
 
ISI Accession Number IDWOS:000252037500026
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorTam, KH
 
dc.contributor.authorHsu, YF
 
dc.contributor.authorZhang, SL
 
dc.contributor.authorXie, MH
 
dc.contributor.authorChan, WK
 
dc.date.accessioned2010-09-06T06:15:19Z
 
dc.date.available2010-09-06T06:15:19Z
 
dc.date.issued2007
 
dc.description.abstractIn this work, GaN nanowires were fabricated on Si substrates coated with gold and nickel catalyst using a thermally assisted chemical vapor deposition method by evaporating mixture of Ga, GaN, MnO2 (only for Mn-doped GaN) and carbon (single wall carbon nanotubes (SWCNT) or graphite) at 1100 °C in ammonia gas flow. The fabricated nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and X-ray diffractometry (XRD). We investigated the influence of the source of carbon and substrate temperature on the morphology and composition of the nanowires. We found that nanowire composition is strongly dependent on the substrate temperature, with oxygen incorporation increasing with decreasing substrate temperature, and also on the composition of the source material. Growth mechanism and properties of obtained nanostructures are discussed. © 2007 Elsevier B.V. All rights reserved.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationThin Solid Films, 2007, v. 516 n. 2-4, p. 238-242 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.tsf.2007.06.031
 
dc.identifier.doihttp://dx.doi.org/10.1016/j.tsf.2007.06.031
 
dc.identifier.epage242
 
dc.identifier.hkuros139148
 
dc.identifier.isiWOS:000252037500026
 
dc.identifier.issn0040-6090
2013 Impact Factor: 1.867
2013 SCImago Journal Rankings: 0.884
 
dc.identifier.issue2-4
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-36049048583
 
dc.identifier.spage238
 
dc.identifier.urihttp://hdl.handle.net/10722/69619
 
dc.identifier.volume516
 
dc.languageeng
 
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
 
dc.publisher.placeSwitzerland
 
dc.relation.ispartofThin Solid Films
 
dc.relation.referencesReferences in Scopus
 
dc.subjectGaN
 
dc.subjectMn-doped
 
dc.subjectNanowires
 
dc.titleGaN nanowires-influence of the starting material on nanowire growth
 
dc.typeArticle
 
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<contributor.author>Hsu, YF</contributor.author>
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<contributor.author>Xie, MH</contributor.author>
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Author Affiliations
  1. The University of Hong Kong