Article: GaN nanowires-influence of the starting material on nanowire growth

File Download Links for fulltext
(May Require Subscription)
Supplementary
  • Basic View
  • Metadata View
  • XML View
TitleGaN nanowires-influence of the starting material on nanowire growth
AuthorsDjurišić, AB1
Tam, KH1
Hsu, YF1
Zhang, SL1
Xie, MH1
Chan, WK1
KeywordsGaN
Mn-doped
Nanowires
Issue Date2007
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
CitationThin Solid Films, 2007, v. 516 n. 2-4, p. 238-242 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.tsf.2007.06.031
AbstractIn this work, GaN nanowires were fabricated on Si substrates coated with gold and nickel catalyst using a thermally assisted chemical vapor deposition method by evaporating mixture of Ga, GaN, MnO2 (only for Mn-doped GaN) and carbon (single wall carbon nanotubes (SWCNT) or graphite) at 1100 °C in ammonia gas flow. The fabricated nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and X-ray diffractometry (XRD). We investigated the influence of the source of carbon and substrate temperature on the morphology and composition of the nanowires. We found that nanowire composition is strongly dependent on the substrate temperature, with oxygen incorporation increasing with decreasing substrate temperature, and also on the composition of the source material. Growth mechanism and properties of obtained nanostructures are discussed. © 2007 Elsevier B.V. All rights reserved.
ISSN0040-6090
2011 Impact Factor: 1.89
2011 SCImago Journal Rankings: 0.159
DOIhttp://dx.doi.org/10.1016/j.tsf.2007.06.031
ISI Accession Number IDWOS:000252037500026
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorDjurišić, AB
dc.contributor.authorTam, KH
dc.contributor.authorHsu, YF
dc.contributor.authorZhang, SL
dc.contributor.authorXie, MH
dc.contributor.authorChan, WK
dc.date.accessioned2010-09-06T06:15:19Z
dc.date.available2010-09-06T06:15:19Z
dc.date.issued2007
dc.description.abstractIn this work, GaN nanowires were fabricated on Si substrates coated with gold and nickel catalyst using a thermally assisted chemical vapor deposition method by evaporating mixture of Ga, GaN, MnO2 (only for Mn-doped GaN) and carbon (single wall carbon nanotubes (SWCNT) or graphite) at 1100 °C in ammonia gas flow. The fabricated nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and X-ray diffractometry (XRD). We investigated the influence of the source of carbon and substrate temperature on the morphology and composition of the nanowires. We found that nanowire composition is strongly dependent on the substrate temperature, with oxygen incorporation increasing with decreasing substrate temperature, and also on the composition of the source material. Growth mechanism and properties of obtained nanostructures are discussed. © 2007 Elsevier B.V. All rights reserved.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationThin Solid Films, 2007, v. 516 n. 2-4, p. 238-242 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.tsf.2007.06.031
dc.identifier.doihttp://dx.doi.org/10.1016/j.tsf.2007.06.031
dc.identifier.epage242
dc.identifier.hkuros139148
dc.identifier.isiWOS:000252037500026
dc.identifier.issn0040-6090
2011 Impact Factor: 1.89
2011 SCImago Journal Rankings: 0.159
dc.identifier.issue2-4
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-36049048583
dc.identifier.spage238
dc.identifier.urihttp://hdl.handle.net/10722/69619
dc.identifier.volume516
dc.languageeng
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
dc.publisher.placeSwitzerland
dc.relation.ispartofThin Solid Films
dc.relation.referencesReferences in Scopus
dc.subjectGaN
dc.subjectMn-doped
dc.subjectNanowires
dc.titleGaN nanowires-influence of the starting material on nanowire growth
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong