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Article: Hydrothermal synthesis vs electrodeposition for high specific capacitance nanostructured NiO films

TitleHydrothermal synthesis vs electrodeposition for high specific capacitance nanostructured NiO films
Authors
Issue Date2008
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
Citation
Electrochemical And Solid-State Letters, 2008, v. 11 n. 6, p. D56-D59 How to Cite?
AbstractNiO nanostructured films were synthesized by hydrothermal and electrodeposition methods at different deposition temperatures. Films fabricated by different methods had similar crystalline structures, but different morphologies. The electrochemical properties of the NiO films were studied by cyclic voltammetry (CV) and electrochemical impedance spectroscopy. For both fabrication methods, annealing was necessary to convert the films to NiO. After annealing at 300°C, all films behaved as pseudocapacitors. The electrodeposited film fabricated at a deposition temperature of 70°C on Ti foil exhibited a high value of pseudocapacitance (148 F/g at 100 mV/s CV scan rate), which suggests that electrodeposited films are promising for supercapacitor applications. © 2008 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/69339
ISSN
2014 Impact Factor: 2.321
2015 SCImago Journal Rankings: 0.842
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXi, YYen_HK
dc.contributor.authorLi, Den_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorMan, KYKen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2010-09-06T06:12:45Z-
dc.date.available2010-09-06T06:12:45Z-
dc.date.issued2008en_HK
dc.identifier.citationElectrochemical And Solid-State Letters, 2008, v. 11 n. 6, p. D56-D59en_HK
dc.identifier.issn1099-0062en_HK
dc.identifier.urihttp://hdl.handle.net/10722/69339-
dc.description.abstractNiO nanostructured films were synthesized by hydrothermal and electrodeposition methods at different deposition temperatures. Films fabricated by different methods had similar crystalline structures, but different morphologies. The electrochemical properties of the NiO films were studied by cyclic voltammetry (CV) and electrochemical impedance spectroscopy. For both fabrication methods, annealing was necessary to convert the films to NiO. After annealing at 300°C, all films behaved as pseudocapacitors. The electrodeposited film fabricated at a deposition temperature of 70°C on Ti foil exhibited a high value of pseudocapacitance (148 F/g at 100 mV/s CV scan rate), which suggests that electrodeposited films are promising for supercapacitor applications. © 2008 The Electrochemical Society.en_HK
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/en_HK
dc.relation.ispartofElectrochemical and Solid-State Lettersen_HK
dc.rightsElectrochemical and Solid-State Letters. Copyright © Electrochemical Society, Inc.en_HK
dc.titleHydrothermal synthesis vs electrodeposition for high specific capacitance nanostructured NiO filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1099-0062&volume=11&spage=D56&epage=D59&date=2008&atitle=Hydrothermal+synthesis+vs+electrodeposition+for+high+specific+capacitance+nanostructured+NiO+filmsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.2903345en_HK
dc.identifier.scopuseid_2-s2.0-42349115662en_HK
dc.identifier.hkuros142412en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-42349115662&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume11en_HK
dc.identifier.issue6en_HK
dc.identifier.spageD56en_HK
dc.identifier.epageD59en_HK
dc.identifier.isiWOS:000255117500015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridLi, D=36062291500en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridMan, KYK=8051698900en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK

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