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Article: In situ photoluminescence characterization of porous silicon formation

TitleIn situ photoluminescence characterization of porous silicon formation
Authors
Issue Date1999
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 1999, v. 342 n. 1, p. 142-147 How to Cite?
AbstractP-type silicon wafers (100) with resistivities of 0.1-0.9 Ω cm were electrochemically etched in 2% HF solution at 0.7077 mA cm-2. The photoluminescence (PL) spectra for each wafer were monitored in situ using a low power 325 nm (He/Cd Laser) source and detected with a charged coupled detector (CCD) system. Three bands at 540 nm, 570 nm, and 612 nm were observed in the photoluminescence spectra. The band intensities grew with time until about 15 min of etching had occurred. The growth of PL intensities generally correlates with the surface morphologies and increase in roughness found from ex situ atomic force microscopy (AFM) of similarly etched samples. Ex situ PL characterization was also performed for the AFM analyzed samples. While the time profiles of the ex situ and in situ PL intensities were about the same, the ex situ peak intensities at longer wavelengths continued to increase after 15 min. The results of energy dispersive X-ray analysis (EDX) suggested that this may be due to the effect of oxygen in the air exposed samples.
Persistent Identifierhttp://hdl.handle.net/10722/69116
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChi, Nen_HK
dc.contributor.authorPhillips, DLen_HK
dc.contributor.authorChan, KYen_HK
dc.date.accessioned2010-09-06T06:10:43Z-
dc.date.available2010-09-06T06:10:43Z-
dc.date.issued1999en_HK
dc.identifier.citationThin Solid Films, 1999, v. 342 n. 1, p. 142-147en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/69116-
dc.description.abstractP-type silicon wafers (100) with resistivities of 0.1-0.9 Ω cm were electrochemically etched in 2% HF solution at 0.7077 mA cm-2. The photoluminescence (PL) spectra for each wafer were monitored in situ using a low power 325 nm (He/Cd Laser) source and detected with a charged coupled detector (CCD) system. Three bands at 540 nm, 570 nm, and 612 nm were observed in the photoluminescence spectra. The band intensities grew with time until about 15 min of etching had occurred. The growth of PL intensities generally correlates with the surface morphologies and increase in roughness found from ex situ atomic force microscopy (AFM) of similarly etched samples. Ex situ PL characterization was also performed for the AFM analyzed samples. While the time profiles of the ex situ and in situ PL intensities were about the same, the ex situ peak intensities at longer wavelengths continued to increase after 15 min. The results of energy dispersive X-ray analysis (EDX) suggested that this may be due to the effect of oxygen in the air exposed samples.en_HK
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.titleIn situ photoluminescence characterization of porous silicon formationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=342&spage=142&epage=147&date=1999&atitle=In+situ+photoluminescence+characterization+of+porous+silicon+formationen_HK
dc.identifier.emailPhillips, DL:phillips@hku.hken_HK
dc.identifier.emailChan, KY:hrsccky@hku.hken_HK
dc.identifier.authorityPhillips, DL=rp00770en_HK
dc.identifier.authorityChan, KY=rp00662en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0040-6090(98)01470-9en_HK
dc.identifier.scopuseid_2-s2.0-0032625580en_HK
dc.identifier.hkuros42677en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032625580&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume342en_HK
dc.identifier.issue1en_HK
dc.identifier.spage142en_HK
dc.identifier.epage147en_HK
dc.identifier.isiWOS:000079981500023-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridChi, N=7006655640en_HK
dc.identifier.scopusauthoridPhillips, DL=7404519365en_HK
dc.identifier.scopusauthoridChan, KY=7406034142en_HK

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