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Conference Paper: Inverse image problem of designing phase shifting masks in optical lithography

TitleInverse image problem of designing phase shifting masks in optical lithography
Authors
KeywordsInverse problems
Optical lithography
Optical proximity correction
Resolution enhancement techniques
Issue Date2008
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000349
Citation
Proceedings - International Conference On Image Processing, Icip, 2008, p. 1832-1835 How to Cite?
AbstractThe continual shrinkage of minimum feature size in integrated circuit (IC) fabrication incurs more and more serious distortion in the optical lithography process, generating circuit patterns deviating from the desired ones. Conventional resolution enhancement techniques (RETs) are facing critical challenges in compensating such increasingly severe distortion. The approach of inverse lithography, which is a branch of mask design methodology to treat the design as an inverse image problem, is adopted in this paper. We apply nonlinear optimization techniques to design masks with minimally distorted output. The output patterns so generated have high contrast and low dose sensitivity. We also propose a dynamic program-based initialization scheme to pre-assign phases to the layout. © 2008 IEEE.
DescriptionIEEE International Conference on Image Processing
Persistent Identifierhttp://hdl.handle.net/10722/61975
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChan, SHen_HK
dc.contributor.authorLam, EYen_HK
dc.date.accessioned2010-07-13T03:51:20Z-
dc.date.available2010-07-13T03:51:20Z-
dc.date.issued2008en_HK
dc.identifier.citationProceedings - International Conference On Image Processing, Icip, 2008, p. 1832-1835en_HK
dc.identifier.issn1522-4880en_HK
dc.identifier.urihttp://hdl.handle.net/10722/61975-
dc.descriptionIEEE International Conference on Image Processingen_HK
dc.description.abstractThe continual shrinkage of minimum feature size in integrated circuit (IC) fabrication incurs more and more serious distortion in the optical lithography process, generating circuit patterns deviating from the desired ones. Conventional resolution enhancement techniques (RETs) are facing critical challenges in compensating such increasingly severe distortion. The approach of inverse lithography, which is a branch of mask design methodology to treat the design as an inverse image problem, is adopted in this paper. We apply nonlinear optimization techniques to design masks with minimally distorted output. The output patterns so generated have high contrast and low dose sensitivity. We also propose a dynamic program-based initialization scheme to pre-assign phases to the layout. © 2008 IEEE.en_HK
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000349en_HK
dc.relation.ispartofProceedings - International Conference on Image Processing, ICIPen_HK
dc.subjectInverse problemsen_HK
dc.subjectOptical lithographyen_HK
dc.subjectOptical proximity correctionen_HK
dc.subjectResolution enhancement techniquesen_HK
dc.titleInverse image problem of designing phase shifting masks in optical lithographyen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ICIP.2008.4712134en_HK
dc.identifier.scopuseid_2-s2.0-69949131722en_HK
dc.identifier.hkuros158732en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-69949131722&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1832en_HK
dc.identifier.epage1835en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChan, SH=24824181300en_HK
dc.identifier.scopusauthoridLam, EY=7102890004en_HK

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