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Article: Disorder effects in the quantum Hall effect of graphene p-n junctions

TitleDisorder effects in the quantum Hall effect of graphene p-n junctions
Authors
Li, JShen, SQ
KeywordsPhysics
Issue Date2008
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2008, v. 78 n. 20, article no. 205308 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.78.205308
AbstractThe quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character. © 2008 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/59668
ISSN
1098-0121
2014 Impact Factor: 3.736
ISI Accession Number ID
WOS:000261215400047
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7041/07P
Funding Information:

This work was supported by the Research Grant Council of Hong Kong under Grant No. HKU 7041/07P.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Jen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2010-05-31T03:54:49Z-
dc.date.available2010-05-31T03:54:49Z-
dc.date.issued2008en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2008, v. 78 n. 20, article no. 205308-
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59668-
dc.description.abstractThe quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character. © 2008 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.rightsCopyright 2008 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.78.205308-
dc.subjectPhysics-
dc.titleDisorder effects in the quantum Hall effect of graphene p-n junctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=78 &issue=20 article no. 205308&spage=&epage=&date=2008&atitle=Disorder+effects+in+the+quantum+Hall+effect+of+graphene+p-n+junctionsen_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.78.205308en_HK
dc.identifier.scopuseid_2-s2.0-56349166044en_HK
dc.identifier.hkuros161433en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-56349166044&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume78en_HK
dc.identifier.issue20en_HK
dc.identifier.spagearticle no. 205308-
dc.identifier.epagearticle no. 205308-
dc.identifier.isiWOS:000261215400047-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, J=26643417100en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.issnl1098-0121-

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