Conference Paper: Defects in zinc-implanted ZnO thin films

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TitleDefects in zinc-implanted ZnO thin films
AuthorsSchmidt, M3
Ellguth, M3
Czekalla, C3
V Wenckstern, H3
Pickenhain, R3
Grundmann, M3
Brauer, G4
Skorupa, W4
Helm, M4
Gu, Q1 2
Ling, CC2
Issue Date2009
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
CitationJournal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2009, v. 27 n. 3, p. 1597-1600 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3086659
AbstractDefects in zinc-implanted and thermally annealed ZnO thin films were investigated by means of capacitance-voltage spectroscopy (C -V), thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) spectroscopy. The authors report on the formation of two donor states approximately 35 and 190 meV below the conduction band edge, observed by TAS and DLTS, respectively. In the PL spectra of a reference sample a peak at 3.366 eV was present, which diminished after the implantation, while a new peak at 3.364 eV was observed only in the spectrum of the implanted sample. Since only intrinsic ions were implanted, the authors consider the defects formed by the zinc implantation and annealing to be intrinsic. © 2009 American Vacuum Society.
ISSN1071-1023
2011 Impact Factor: 1.341
2011 SCImago Journal Rankings: 0.174
DOIhttp://dx.doi.org/10.1116/1.3086659
ISI Accession Number IDWOS:000266500300116
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorSchmidt, M
dc.contributor.authorEllguth, M
dc.contributor.authorCzekalla, C
dc.contributor.authorV Wenckstern, H
dc.contributor.authorPickenhain, R
dc.contributor.authorGrundmann, M
dc.contributor.authorBrauer, G
dc.contributor.authorSkorupa, W
dc.contributor.authorHelm, M
dc.contributor.authorGu, Q
dc.contributor.authorLing, CC
dc.date.accessioned2010-05-31T03:54:32Z
dc.date.available2010-05-31T03:54:32Z
dc.date.issued2009
dc.description.abstractDefects in zinc-implanted and thermally annealed ZnO thin films were investigated by means of capacitance-voltage spectroscopy (C -V), thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) spectroscopy. The authors report on the formation of two donor states approximately 35 and 190 meV below the conduction band edge, observed by TAS and DLTS, respectively. In the PL spectra of a reference sample a peak at 3.366 eV was present, which diminished after the implantation, while a new peak at 3.364 eV was observed only in the spectrum of the implanted sample. Since only intrinsic ions were implanted, the authors consider the defects formed by the zinc implantation and annealing to be intrinsic. © 2009 American Vacuum Society.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationJournal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2009, v. 27 n. 3, p. 1597-1600 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3086659
dc.identifier.doihttp://dx.doi.org/10.1116/1.3086659
dc.identifier.epage1600
dc.identifier.hkuros156096
dc.identifier.isiWOS:000266500300116
dc.identifier.issn1071-1023
2011 Impact Factor: 1.341
2011 SCImago Journal Rankings: 0.174
dc.identifier.issue3
dc.identifier.scopuseid_2-s2.0-77955231558
dc.identifier.spage1597
dc.identifier.urihttp://hdl.handle.net/10722/59652
dc.identifier.volume27
dc.languageeng
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
dc.publisher.placeUnited States
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.relation.referencesReferences in Scopus
dc.titleDefects in zinc-implanted ZnO thin films
dc.typeConference_Paper
Author Affiliations
  1. Ohio State University
  2. The University of Hong Kong
  3. Universität Leipzig
  4. Forschungszentrum Dresden Rossendorf