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Conference Paper: Defects in zinc-implanted ZnO thin films
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TitleDefects in zinc-implanted ZnO thin films
 
AuthorsSchmidt, M3
Ellguth, M3
Czekalla, C3
V Wenckstern, H3
Pickenhain, R3
Grundmann, M3
Brauer, G4
Skorupa, W4
Helm, M4
Gu, Q2 1
Ling, CC2
 
Issue Date2009
 
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
 
CitationJournal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2009, v. 27 n. 3, p. 1597-1600 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3086659
 
AbstractDefects in zinc-implanted and thermally annealed ZnO thin films were investigated by means of capacitance-voltage spectroscopy (C -V), thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) spectroscopy. The authors report on the formation of two donor states approximately 35 and 190 meV below the conduction band edge, observed by TAS and DLTS, respectively. In the PL spectra of a reference sample a peak at 3.366 eV was present, which diminished after the implantation, while a new peak at 3.364 eV was observed only in the spectrum of the implanted sample. Since only intrinsic ions were implanted, the authors consider the defects formed by the zinc implantation and annealing to be intrinsic. © 2009 American Vacuum Society.
 
ISSN1071-1023
2013 Impact Factor: 1.358
2013 SCImago Journal Rankings: 0.432
 
DOIhttp://dx.doi.org/10.1116/1.3086659
 
ISI Accession Number IDWOS:000266500300116
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorSchmidt, M
 
dc.contributor.authorEllguth, M
 
dc.contributor.authorCzekalla, C
 
dc.contributor.authorV Wenckstern, H
 
dc.contributor.authorPickenhain, R
 
dc.contributor.authorGrundmann, M
 
dc.contributor.authorBrauer, G
 
dc.contributor.authorSkorupa, W
 
dc.contributor.authorHelm, M
 
dc.contributor.authorGu, Q
 
dc.contributor.authorLing, CC
 
dc.date.accessioned2010-05-31T03:54:32Z
 
dc.date.available2010-05-31T03:54:32Z
 
dc.date.issued2009
 
dc.description.abstractDefects in zinc-implanted and thermally annealed ZnO thin films were investigated by means of capacitance-voltage spectroscopy (C -V), thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) spectroscopy. The authors report on the formation of two donor states approximately 35 and 190 meV below the conduction band edge, observed by TAS and DLTS, respectively. In the PL spectra of a reference sample a peak at 3.366 eV was present, which diminished after the implantation, while a new peak at 3.364 eV was observed only in the spectrum of the implanted sample. Since only intrinsic ions were implanted, the authors consider the defects formed by the zinc implantation and annealing to be intrinsic. © 2009 American Vacuum Society.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationJournal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2009, v. 27 n. 3, p. 1597-1600 [How to Cite?]
DOI: http://dx.doi.org/10.1116/1.3086659
 
dc.identifier.doihttp://dx.doi.org/10.1116/1.3086659
 
dc.identifier.epage1600
 
dc.identifier.hkuros156096
 
dc.identifier.isiWOS:000266500300116
 
dc.identifier.issn1071-1023
2013 Impact Factor: 1.358
2013 SCImago Journal Rankings: 0.432
 
dc.identifier.issue3
 
dc.identifier.scopuseid_2-s2.0-77955231558
 
dc.identifier.spage1597
 
dc.identifier.urihttp://hdl.handle.net/10722/59652
 
dc.identifier.volume27
 
dc.languageeng
 
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
 
dc.relation.referencesReferences in Scopus
 
dc.titleDefects in zinc-implanted ZnO thin films
 
dc.typeConference_Paper
 
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Author Affiliations
  1. Ohio State University
  2. The University of Hong Kong
  3. Universität Leipzig
  4. Forschungszentrum Dresden Rossendorf