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Article: Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy

TitleIsochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy
Authors
Luo, JMZhong, ZQGong, MFung, SLing, CC
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2009, v. 105 n. 6, article no. 063711 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3087757
AbstractAl doped p -type 6H silicon carbide was irradiated by low energy electrons to create primary defects. Two deep levels at EV +0.36 eV and EV +0.81 eV were created by this irradiation. Isochronal annealing study was carried out on the electron irradiated sample to investigate the annealing out of the two primary defects and the creation of thermal annealing-induced secondary defects. Four more deep hole traps (0.45, 0.56, 0.74, and 0.71 eV above the valence band) were formed during the whole annealing process up to a temperature of 1600 °C. All the electron irradiated deep level defects were annealed out after the 1600 °C annealing. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59651
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000264774000105
Funding AgencyGrant Number
HKSAR RGC GRF7033/05P
Funding Information:

This work was partially financially supported by the HKSAR RGC GRF (Project No. 7033/05P).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLuo, JMen_HK
dc.contributor.authorZhong, ZQen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-05-31T03:54:31Z-
dc.date.available2010-05-31T03:54:31Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Applied Physics, 2009, v. 105 n. 6, article no. 063711-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59651-
dc.description.abstractAl doped p -type 6H silicon carbide was irradiated by low energy electrons to create primary defects. Two deep levels at EV +0.36 eV and EV +0.81 eV were created by this irradiation. Isochronal annealing study was carried out on the electron irradiated sample to investigate the annealing out of the two primary defects and the creation of thermal annealing-induced secondary defects. Four more deep hole traps (0.45, 0.56, 0.74, and 0.71 eV above the valence band) were formed during the whole annealing process up to a temperature of 1600 °C. All the electron irradiated deep level defects were annealed out after the 1600 °C annealing. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.titleIsochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=105&spage=063711: 1&epage=4&date=2009&atitle=Isochronal+annealing+study+of+low+energy+electron+irradiated+Al-doped+p-type+6H+silicon+carbide+with+deep+level+transient+spectroscopyen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3087757en_HK
dc.identifier.scopuseid_2-s2.0-63749120231en_HK
dc.identifier.hkuros155101en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63749120231&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume105en_HK
dc.identifier.issue6en_HK
dc.identifier.spagearticle no. 063711-
dc.identifier.epagearticle no. 063711-
dc.identifier.eissn1089-7550-
dc.identifier.isiWOS:000264774000105-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLuo, JM=24081000400en_HK
dc.identifier.scopusauthoridZhong, ZQ=8304932300en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.issnl0021-8979-

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