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Article: Study of GaN/SiC contact using slow positron beam
Title | Study of GaN/SiC contact using slow positron beam |
---|---|
Authors | |
Keywords | Defect Positron annihilation Semiconductor |
Issue Date | 2008 |
Publisher | Kexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/ |
Citation | Wuli Xuebao/Acta Physica Sinica, 2008, v. 57 n. 9, p. 5906-5910 How to Cite? |
Abstract | Using a slow positron beam and the program VEPFIT, we found there exists a barrier in the interface between GaN and SiC, which is caused by lots of band-like defects existing in it. The existence of the barrier induced two backing electric fields in diverse directions close to the interface. These fields can produce a longer diffusion length in the SiC region where no field exists compared with that of SiC region, which has an electric field at a set value. The fitted value of the electric field offers a good reference for studying the situation in a real the interface. |
Persistent Identifier | http://hdl.handle.net/10722/59649 |
ISSN | 2023 Impact Factor: 0.8 2023 SCImago Journal Rankings: 0.214 |
DC Field | Value | Language |
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dc.contributor.author | Wang, HY | en_HK |
dc.contributor.author | Weng, HM | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.date.accessioned | 2010-05-31T03:54:28Z | - |
dc.date.available | 2010-05-31T03:54:28Z | - |
dc.date.issued | 2008 | en_HK |
dc.identifier.citation | Wuli Xuebao/Acta Physica Sinica, 2008, v. 57 n. 9, p. 5906-5910 | en_HK |
dc.identifier.issn | 1000-3290 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/59649 | - |
dc.description.abstract | Using a slow positron beam and the program VEPFIT, we found there exists a barrier in the interface between GaN and SiC, which is caused by lots of band-like defects existing in it. The existence of the barrier induced two backing electric fields in diverse directions close to the interface. These fields can produce a longer diffusion length in the SiC region where no field exists compared with that of SiC region, which has an electric field at a set value. The fitted value of the electric field offers a good reference for studying the situation in a real the interface. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Kexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/ | en_HK |
dc.relation.ispartof | Wuli Xuebao/Acta Physica Sinica | en_HK |
dc.subject | Defect | en_HK |
dc.subject | Positron annihilation | en_HK |
dc.subject | Semiconductor | en_HK |
dc.title | Study of GaN/SiC contact using slow positron beam | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-53649100443 | en_HK |
dc.identifier.hkuros | 155098 | en_HK |
dc.identifier.volume | 57 | en_HK |
dc.identifier.issue | 9 | en_HK |
dc.identifier.spage | 5906 | en_HK |
dc.identifier.epage | 5910 | en_HK |
dc.publisher.place | China | en_HK |
dc.identifier.scopusauthorid | Wang, HY=7501740999 | en_HK |
dc.identifier.scopusauthorid | Weng, HM=7102468725 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.issnl | 1000-3290 | - |