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Article: Vacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approach

TitleVacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approach
Authors
Issue Date2008
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal Of Physics D: Applied Physics, 2008, v. 41 n. 19 How to Cite?
AbstractSix-fold helium ion implantation was carried out on nitrogen doped n-type 6H-SiC epi samples. A box-shaped He-implantation profile and damage region was thus introduced. Vacancy-type defects in the implanted region were studied by positron annihilation spectroscopy using a monoenergetic positron beam. The average size of the vacancy-type defect detected in the as-He-implanted sample was the divacancy (V 2). Thermal annealing had the effect of shrinking the defective region. Annealing at temperatures lower than 900 °C had the effect of removing vacancy-type defects in the defective region. While the annealing temperature is above 900 °C, the size of the vacancy-type defects in the defective region increased with annealing temperature. At the annealing temperature of 1600 °C, the defective region reduced to ∼100 nm and the vacancy-type defects within the region agglomerated to clusters having an average size of 14 V 2. © 2008 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/59639
ISSN
2015 Impact Factor: 2.772
2015 SCImago Journal Rankings: 0.682
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council, HKSAR7033/05P
Funding Information:

This work was supported by the Research Grant Council, HKSAR (No 7033/05P).

References

 

DC FieldValueLanguage
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-05-31T03:54:18Z-
dc.date.available2010-05-31T03:54:18Z-
dc.date.issued2008en_HK
dc.identifier.citationJournal Of Physics D: Applied Physics, 2008, v. 41 n. 19en_HK
dc.identifier.issn0022-3727en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59639-
dc.description.abstractSix-fold helium ion implantation was carried out on nitrogen doped n-type 6H-SiC epi samples. A box-shaped He-implantation profile and damage region was thus introduced. Vacancy-type defects in the implanted region were studied by positron annihilation spectroscopy using a monoenergetic positron beam. The average size of the vacancy-type defect detected in the as-He-implanted sample was the divacancy (V 2). Thermal annealing had the effect of shrinking the defective region. Annealing at temperatures lower than 900 °C had the effect of removing vacancy-type defects in the defective region. While the annealing temperature is above 900 °C, the size of the vacancy-type defects in the defective region increased with annealing temperature. At the annealing temperature of 1600 °C, the defective region reduced to ∼100 nm and the vacancy-type defects within the region agglomerated to clusters having an average size of 14 V 2. © 2008 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpden_HK
dc.relation.ispartofJournal of Physics D: Applied Physicsen_HK
dc.titleVacancy-type defects in 6H-silicon carbide induced by He-implantation: A positron annihilation spectroscopy approachen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-3727&volume=41&spage=195304: 1&epage=7&date=2008&atitle=Vacancy-type+defects+in+6H-silicon+carbide+induced+by+He-implantation:+A+positron+annihilation+spectroscopy+approachen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0022-3727/41/19/195304en_HK
dc.identifier.scopuseid_2-s2.0-53349160511en_HK
dc.identifier.hkuros152354en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-53349160511&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume41en_HK
dc.identifier.issue19en_HK
dc.identifier.isiWOS:000259441800055-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK

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